Luminescence Microscope for Detecting Energy Distribution of Non-Radiative Recombination Centers
| Project/Area Number |
25600087
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Saitama University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
ISLAM Touhidul 埼玉大学, 理工学研究科, 研究員 (90646358)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2015: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | フォトルミネッセンス / 非発光再結合準位 / 光学評価 / 結晶工学 / 禁制帯内励起 |
|---|
| Outline of Final Research Achievements |
It is inevitable to detect non-radiative recombination (NRR) centers which deteriorate quantum efficiency and lifetime of light emitting materials and devices, clarify their origins and eliminate them. NRR centers have been detected and characterized by non-contacting and non-destractive method utilizing a below-gap excitation (BGE) light and observing the photoluminescence (PL) intensity change. The BGE light sources were supplemented by adding a Xe lamp stabilized by a laser diode, and two-wavelength excited PL measurements were carried out for GaN, GaPN and phosphor materials.
As a result, it became possible to exemplify directly that the yellow luminescence band in GaN corresponds to the transition between a shallow donor to a deep level about 1eV above the valence band. It is also shown that two NRR centers above and below the intermediate band exist in GaPN with N concentration of 0.56%.
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Report
(4 results)
Research Products
(53 results)
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[Presentation] Recent Progress of AlGaN Deep-UV LEDs2016
Author(s)
H. Hirayama, M. Jo, N. Maeda and N. Kamata
Organizer
Int. Symp. on the Science and Technology of Lighting (LS-15)
Place of Presentation
Kyoto, Japan
Year and Date
2016-05-22
Related Report
Int'l Joint Research / Invited
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[Presentation] Recent Progress of AlGaN Deep-UV LEDs2016
Author(s)
H. Hirayama, M. Jo, N. Maeda and N. Kamata
Organizer
Int. Symp. on Advanced Plasma Science and its Applications for Nitrides and Nano Materials / Int. Conf. on Plasma-Nano Technology & Science (IS-Plasma 2016 / IC-PLANTS2016)
Place of Presentation
Nagoya, Japan
Year and Date
2016-03-06
Related Report
Int'l Joint Research / Invited
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[Book] 新編「照明専門講座テキスト」第31期2015
Author(s)
鎌田憲彦,池田紘一, 稲森真, 入倉隆, 上谷芳昭, 鵜川浩一, 宇山徹, 垣谷勉,河合悟, 木下忍, 坂本政佑, 佐藤孝, 神野雅文, 田淵義彦, 長篤志, 土井正, 橋本和明, 八田章光, 松島公嗣, 村上克介
Total Pages
374
Publisher
一般社団法人照明学会
Related Report
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[Book] 新編「照明専門講座テキスト」2014
Author(s)
鎌田憲彦,池田紘一, 稲森真, 入倉隆, 上谷芳昭, 鵜川浩一, 宇山徹, 垣谷勉,河合悟, 木下忍, 坂本政佑, 佐藤孝, 神野雅文, 田淵義彦, 長篤志, 土井正, 橋本和明, 八田章光, 松島公嗣, 村上克介(分担執筆)
Publisher
一般社団法人照明学会
Related Report
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[Book] ヤリ―ヴ‐イェー 「光ｴﾚｸﾄﾛﾆｸｽ展開編」2014
Author(s)
多田邦雄, 神谷武志(監訳), 鎌田憲彦, 石川卓也, 板谷太郎, 伊藤文彦, 岡田至崇, 土屋昌弘, 中野義昭, 中林隆志, 林秀樹（共訳）
Publisher
丸善出版株式会社
Related Report
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