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Innovation of CMOS process using crystallographic orientation during multiple-layer epi-growth

Research Project

Project/Area Number 25600091
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionTohoku University

Principal Investigator

Suemitsu Maki  東北大学, 電気通信研究所, 教授 (00134057)

Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Keywords3C-SiC / ヘテロエピタキシ / 積層欠陥 / 転位 / X線ロッキング曲線 / CMOS / 断面TEM観察 / RHEED / 面欠陥 / CVD / 双晶
Outline of Final Research Achievements

Aiming at realization of a combined Si(110)/Si(111) surface having similar electron (Si(111)) and hole (Si(110)) mobilities, this study pursued development of the Si(111)/Si(110) "rotated" epitaxy by adding a 3C-SiC(111) interlayer in between. As a result, detail of the crystallographic rotation mechanism has been clarified for the first time, whose knowledge was then utilized in the betterment of the SiC(111) film quality by 23 % as measured by the width of the x-ray Rocking curve. By applying a conventional LPCVD method to this film, it was demonstrated that the growth of Si(111) is actually possible on the Si(110) substrate by this technology.

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • 2013 Research-status Report
  • Research Products

    (41 results)

All 2016 2015 2014 Other

All Int'l Joint Research (1 results) Journal Article (13 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 8 results,  Open Access: 6 results,  Acknowledgement Compliant: 3 results) Presentation (27 results) (of which Int'l Joint Research: 6 results,  Invited: 13 results)

  • [Int'l Joint Research] トムスク州立大学(ロシア連邦)

    • Related Report
      2015 Annual Research Report
  • [Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2016

    • Author(s)
      Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
    • Journal Title

      Phys. Status Solidi A

      Volume: 印刷中 Issue: 5 Pages: 1125-1129

    • DOI

      10.1002/pssa.201532675

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] 微量O2添加アニール法によるSi(111)及びSi(100)基板上エピタキシャルグラフェン2015

    • Author(s)
      横山大、今泉京、吹留博一、吉越章隆、寺岡有殿、末光眞希
    • Journal Title

      SPring-8/SACLA利用研究成果集

      Volume: 3 Pages: 356-359

    • NAID

      130007969295

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3X-SiC/Si2015

    • Author(s)
      Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, and Maki Suemitsu
    • Journal Title

      Nanoscale Research Letter

      Volume: 10 Issue: 1 Pages: 421-426

    • DOI

      10.1186/s11671-015-1131-9

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor2015

    • Author(s)
      Hiroyoki Nagasawa, Ramya Gurunathan, Maki Suemitsu
    • Journal Title

      Materials Science Forum

      Volume: 821-823 Pages: 108-114

    • DOI

      10.4028/www.scientific.net/msf.821-823.108

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015

    • Author(s)
      Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
    • Journal Title

      Diamond & Related Materials

      Volume: 67 Pages: 51-53

    • DOI

      10.1016/j.diamond.2016.02.020

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] 高品質エピタキシャルグラフェンを用いたGFETの特性評価2015

    • Author(s)
      須藤亮太、舘野泰範、吹留博一、末光眞希
    • Journal Title

      第62回応用物理学会春季学術講演会 予稿集

      Volume: 1

    • Related Report
      2014 Research-status Report
  • [Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure2014

    • Author(s)
      Sai Jiao, Yuya Murakami, Hiroyuki Nagasawa, Hirokazau Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu
    • Journal Title

      Materials Science Forum

      Volume: 806 Pages: 89-93

    • DOI

      10.4028/www.scientific.net/msf.806.89

    • Related Report
      2015 Annual Research Report 2014 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact2014

    • Author(s)
      Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu, and Toyohiko Kinoshita
    • Journal Title

      Scientific Report

      Volume: 4 Issue: 9 Pages: 37131-5

    • DOI

      10.1088/0022-3727/47/9/094016

    • Related Report
      2014 Research-status Report 2013 Research-status Report
    • Peer Reviewed
  • [Journal Article] Silicon Carbide on Silicon (110) : Surface Structure and Mechanisms of Epitaxial Growth2014

    • Author(s)
      S. Sambonsuge, L.N. Nikitina, Yu.Yu. Hervieu, M. Suemitsu, S.N. Filimonov
    • Journal Title

      Russian Physics Journal

      Volume: 56 Issue: 12 Pages: 1439-1444

    • DOI

      10.1007/s11182-014-0197-7

    • Related Report
      2014 Research-status Report
    • Peer Reviewed
  • [Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor2014

    • Author(s)
      Hiroyuki Nagasawa, Maki Suemitsu
    • Journal Title

      ECSCRM2014: European Conf. on Silicon Carbide and Related Materials Abstracts Book

      Volume: 1

    • Related Report
      2014 Research-status Report
  • [Journal Article] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces2014

    • Author(s)
      M. Suemitsu
    • Journal Title

      2014 Tsukuba Nanotechnology Symposium (TNS'14), Abstract book

      Volume: 1 Pages: 17-17

    • Related Report
      2014 Research-status Report
  • [Journal Article] Graphene based Electronic & Photonic Devices, Circuits and Systems2014

    • Author(s)
      M. Suemitsu
    • Journal Title

      EXMATEC 2014 Book of Abstracts

      Volume: 1 Pages: 197-198

    • Related Report
      2014 Research-status Report
  • [Journal Article] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon2014

    • Author(s)
      M. Suemitsu, S. N. Filimonov
    • Journal Title

      Asia-Pacific Symposium on Solid Surfaces Abstracts Book

      Volume: 1

    • Related Report
      2014 Research-status Report
    • Acknowledgement Compliant
  • [Presentation] Recent Progress in the Epitaxial Graphene Formation on 3C-SiC/Si Substrates2016

    • Author(s)
      Maki Suemitsu
    • Organizer
      2016 MRS Spring Meeting & Exhibit
    • Place of Presentation
      Phoenix Convention Center (Pheonix, AZ, USA)
    • Year and Date
      2016-03-31
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Recent progress in epitaxial graphene on bulk and thin film SiC crystals2015

    • Author(s)
      Maki Suemitsu
    • Organizer
      IEFM 2015: International symposium on emerging functional materials
    • Place of Presentation
      Songdo Convensia (Incheon, Korea)
    • Year and Date
      2015-11-06
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] SiCエピタキシャル成長技術と ポリタイプ積層2015

    • Author(s)
      長澤弘幸
    • Organizer
      第45回結晶成長国内会議(NCCG-45)
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2015-10-20
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Ni-assisted low-temperature formation of epitaxial graphene on3C-SiC/Si and real-time SR-XPS analysis of its reaction2015

    • Author(s)
      Mika Hasegawa
    • Organizer
      2015 international Conference of Silicon Carbide and Related Materials
    • Place of Presentation
      Congress Center Atahotel Naxos Beach (Giadirni Naxos, Italy)
    • Year and Date
      2015-10-06
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Epitaxial graphene formation on SiC and on Si substrates2015

    • Author(s)
      Maki Suemitsu
    • Organizer
      PSS 2015: Physical Sciences Symposia-2015
    • Place of Presentation
      Courtyard Marriott (Cambridge, MA, USA)
    • Year and Date
      2015-09-22
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Si(110)上3C-SiC(111)薄膜の結晶方位回転成長機構2015

    • Author(s)
      横山大、フィリモノフ セルゲイ、長澤弘幸、吹留博一、末光眞希
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-15
    • Related Report
      2015 Annual Research Report
  • [Presentation] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2015

    • Author(s)
      Maki Suemitsu
    • Organizer
      SENM2015: the international conference on Smart Engineering of New Materials
    • Place of Presentation
      Andel's Hotel (Lodz, Poland)
    • Year and Date
      2015-06-25
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015

    • Author(s)
      Maki Suemitsu
    • Organizer
      SENM2015: the international conference on Smart Engineering of New Materials
    • Place of Presentation
      Andel's Hotel (Lodz, Poland)
    • Year and Date
      2015-06-23
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 高品質エピタキシャルグラフェンを用いたGFETの特性評価2015

    • Author(s)
      須藤亮太
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚,日本
    • Year and Date
      2015-03-14
    • Related Report
      2014 Research-status Report
  • [Presentation] Growth of epitaxial graphene on SiC and its application to FET2014

    • Author(s)
      M. Suemitsu
    • Organizer
      2nd Malaysia Graphene and Carbon Nanotube Workshop (MGCW 2014)
    • Place of Presentation
      Kuala Lumpur, Malaysia
    • Year and Date
      2014-10-20
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] グラフェンのディスプレイ応用の可能性グラフェンのディスプレイ応用の可能性2014

    • Author(s)
      末光眞希
    • Organizer
      CEATEC JAPAN 2014/電子ディスプレイ研究専門委員会(EID)
    • Place of Presentation
      幕張、千葉,日本
    • Year and Date
      2014-10-09
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Heteroepitaxy of 3C-SiC on Si and Formation of Epitaxial Graphene2014

    • Author(s)
      M. Suemitsu
    • Organizer
      Asia-Pacific Symposium on Solid Surfaces
    • Place of Presentation
      Vladivostok, Russia
    • Year and Date
      2014-09-30
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor2014

    • Author(s)
      Hiroyuki Nagasawa
    • Organizer
      ECSCRM2014: European Conf. on Silicon Carbide and Related Materials (Key Note Talk)
    • Place of Presentation
      Grenoble, France
    • Year and Date
      2014-09-22
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] What is 'Killer Defect' in 3C-SiC2014

    • Author(s)
      長澤弘幸
    • Organizer
      IUMRS-ICA: the 15th International Union of Materials Research Societies, International Conference in Asia
    • Place of Presentation
      福岡,日本
    • Year and Date
      2014-08-29
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces2014

    • Author(s)
      M. Suemitsu
    • Organizer
      2014 Tsukuba Nanotechnology Symposium (TNS'14)
    • Place of Presentation
      つくば,日本
    • Year and Date
      2014-07-26
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] シリコン基板上3C-SiCのガスソースMBE成長とグラフェン・オン・シリコン技術2014

    • Author(s)
      末光眞希
    • Organizer
      第11回Cat-CVD研究会
    • Place of Presentation
      仙台,日本
    • Year and Date
      2014-07-11
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] Graphene based Electronic & Photonic Devices, Circuits and Systems2014

    • Author(s)
      M. Suemitsu
    • Organizer
      EXMATEC 2014
    • Place of Presentation
      Delphi, Greece
    • Year and Date
      2014-06-19
    • Related Report
      2014 Research-status Report
    • Invited
  • [Presentation] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure

    • Author(s)
      S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, and M. Suemitsu
    • Organizer
      HeteroSic-WASMPE2013
    • Place of Presentation
      Nice, France
    • Related Report
      2013 Research-status Report
  • [Presentation] Si(110)基板上3C-SiC(111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM 評価

    • Author(s)
      三本菅 正太,長澤 弘幸,Sergey Filimonov ,伊藤 駿,吹留 博一,末光 眞希
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      京都
    • Related Report
      2013 Research-status Report
  • [Presentation] From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure

    • Author(s)
      Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      京都
    • Related Report
      2013 Research-status Report
  • [Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates

    • Author(s)
      S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
    • Organizer
      The International Conference on Silicon Carbide and Related Materials
    • Place of Presentation
      宮崎
    • Related Report
      2013 Research-status Report
  • [Presentation] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces

    • Author(s)
      S.N. Filimonov, Yu.Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
    • Organizer
      ACSIN-12&ICSPM21
    • Place of Presentation
      つくば
    • Related Report
      2013 Research-status Report
  • [Presentation] Heteroepitaxy of 3C-SiC on Si and Formation of Epitaxial Graphene

    • Author(s)
      M. Suemitsu
    • Organizer
      半導体に関する日露合同セミナー
    • Place of Presentation
      仙台
    • Related Report
      2013 Research-status Report
    • Invited
  • [Presentation] XRD and Raman-Spectroscopic Evaluation of Graphene on 3C-SiC(111)/Vicinal Si(111) Substrate

    • Author(s)
      N. Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu
    • Organizer
      ALC'13
    • Place of Presentation
      Hawaii, USA
    • Related Report
      2013 Research-status Report
  • [Presentation] Si(110)基板上3C-SiC(111)結晶方位回転エピ膜の断面TEM評価

    • Author(s)
      三本菅 正太、長澤 弘幸、伊藤 駿、吹留 博一、末光 眞希
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      浦和
    • Related Report
      2013 Research-status Report
  • [Presentation] 微傾斜Si(111)基板上3C-SiC(111)薄膜の断面TEM評価

    • Author(s)
      原本 直樹、長澤 弘幸、伊藤 俊、吹留 博一、末光 眞希
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      浦和
    • Related Report
      2013 Research-status Report
  • [Presentation] 3C-SiC/Si(111)ヘテロエピタキシャル界面から発生する積層欠陥の抑制

    • Author(s)
      細谷友崇、三本菅正太、長澤弘幸、伊藤俊、吹留博一、末光眞希
    • Organizer
      SiC及び関連半導体研究 第22回講演会
    • Place of Presentation
      浦和
    • Related Report
      2013 Research-status Report

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Published: 2014-07-25   Modified: 2022-01-31  

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