Innovation of CMOS process using crystallographic orientation during multiple-layer epi-growth
| Project/Area Number |
25600091
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
Suemitsu Maki 東北大学, 電気通信研究所, 教授 (00134057)
|
|---|
| Project Period (FY) |
2013-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
|
|---|
| Keywords | 3C-SiC / ヘテロエピタキシ / 積層欠陥 / 転位 / X線ロッキング曲線 / CMOS / 断面TEM観察 / RHEED / 面欠陥 / CVD / 双晶 |
|---|
| Outline of Final Research Achievements |
Aiming at realization of a combined Si(110)/Si(111) surface having similar electron (Si(111)) and hole (Si(110)) mobilities, this study pursued development of the Si(111)/Si(110) "rotated" epitaxy by adding a 3C-SiC(111) interlayer in between. As a result, detail of the crystallographic rotation mechanism has been clarified for the first time, whose knowledge was then utilized in the betterment of the SiC(111) film quality by 23 % as measured by the width of the x-ray Rocking curve. By applying a conventional LPCVD method to this film, it was demonstrated that the growth of Si(111) is actually possible on the Si(110) substrate by this technology.
|
Report
(4 results)
Research Products
(41 results)
