| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Outline of Final Research Achievements |
Aiming at realization of a combined Si(110)/Si(111) surface having similar electron (Si(111)) and hole (Si(110)) mobilities, this study pursued development of the Si(111)/Si(110) "rotated" epitaxy by adding a 3C-SiC(111) interlayer in between. As a result, detail of the crystallographic rotation mechanism has been clarified for the first time, whose knowledge was then utilized in the betterment of the SiC(111) film quality by 23 % as measured by the width of the x-ray Rocking curve. By applying a conventional LPCVD method to this film, it was demonstrated that the growth of Si(111) is actually possible on the Si(110) substrate by this technology.
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