Four terminal memristor devices for correlation-based synaptic signal transduction
Project/Area Number |
25600098
|
Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
Allocation Type | Multi-year Fund |
Research Field |
Thin film/Surface and interfacial physical properties
|
Research Institution | Osaka University |
Principal Investigator |
Sakai Akira 大阪大学, 基礎工学研究科, 教授 (20314031)
|
Co-Investigator(Renkei-kenkyūsha) |
TAKEUCHI Shotaro 大阪大学, 大学院基礎工学研究科, 助教 (70569384)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
Keywords | メムリスタ / 酸素空孔 / 転位 / 抵抗スイッチング / シナプス / 単結晶 / 金属酸化物 / 4端子 / メモリスタ / 還元 / 抵抗変化 / フィラメント / フォーミング / 透過電子顕微鏡 / 集束イオンビーム加工 / 電子線リソグラフィー / 直接接合基板 / 電流‐電圧特性 / ヒステリシス |
Outline of Final Research Achievements |
We have developed underlying technology of a correlation-based signal transduction synaptic device that mimics high-order functions of biological synapses and demonstrated basic operation of the devices fabricated on reduced SrTiO3 and TiO2 single crystal substrates. A highly-ordered two dimensional screw dislocation network formed by the wafer-bonding technique of SrTiO3 crystals is found to act as a preferential field of oxygen vacancy drift that induces abrupt resistive switching phenomena with high stability. A planer four terminal memristor device fabricated on reduced TiO2 has also been developed. In this device, the resistivity between two driving electrodes can successfully be changed plastically and reversibly by applying electric field from other terminal electrodes. These obtained results open the way to control the behavior of signal transduction in next-generation synaptic devices based on the modification of oxygen vacancy distribution in metal oxide crystals.
|
Report
(4 results)
Research Products
(2 results)