creation of contacts with ultralow electron barrier height by nano structure control of metal-nitride/group-IV semiconductor interfaces
| Project/Area Number |
25600101
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
NISHIDA Minoru 九州大学, 大学院総合理工学研究院 (90183540)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 界面 / 低電子障壁 / Si, SiC / パワーデバイス / Si / SiC |
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| Outline of Final Research Achievements |
We focused on group-4 metal-nitrides (TiN, ZrN, HfN) and aimed to achieve the contacts with low electron barrier heights for Si. It was found that the group-4 metal-nitrides deposited by sputtering showed extremely low electron barrier heights, which are much smaller than those of group-4 metals. The electron barrier heights were 0.27 eV (TiN), 0.30 eV (ZrN),and 0.34 eV (HfN). This phenomenon is likely to be associated with amorphous interlayers containing nitrogen atoms at metal-nitride/Si interfaces. Furthermore, we deposited group-4 metal-nitrides on Si-On-Insulator substrates and fabricated back-gate MOSFET. It was found that off-state currents and parasitic resistances were well correlated with the electron barrier heights.
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Report
(3 results)
Research Products
(9 results)
