| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Outline of Final Research Achievements |
High speed deposition of metal in fine structure is an important issue for Cu interconnects in semiconductor fabrication. In this study we have studied process kinetics of plasma anisotropic CVD, which is a key process to establish Cu deposition in fine structure, and produced metal nanoparticles using plasmas in liquid. For plasma anisotropic CVD, we have found process pressure, distance between a discharge electrode and substrates, and energy of ions impinging to substrates to deposit high density films at high deposition rate. For nanoparticle fabrication using plasmas in liquid, we have succeeded in generating In, Cu, Au, and Pt nanoparticles using 7.6 kHz pulsed discharges of 15.2 kV in discharge voltage. Production yield was quite high of 42 mg/min for In nanoparticles.
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