| Project/Area Number |
25630122
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | ナノ構造形成・制御 / ナノギャップ / エレクトロマイグレーション / 電気・電子材料 / FPGA / 単電子トランジスタ / 電子・電気材料 / マイグレーション / 単電子素子 |
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| Outline of Final Research Achievements |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based resistive switches, and quantum point contacts (QPCs) composed of nanogaps at room temperature. This scheme is based on electromigration induced by a field emission current, which is so-called “activation”. Using the activation method, the electrical properties of Ni nanogaps can be controlled by only adjusting the magnitude of the applied current during the activation process. The conductance of the nanogap changed in quantized steps of 0.5 G0 (G0 = 2e2/h) at the final stage of activation. It is suggested that few-atom Ni contacts are achieved using Ni nanogaps controlled by the activation with precisely tuned applied current. The results clearly indicate that the activation procedure allows us to easily and simply fabricate planar-type nano-scale devices based on Ni nanogaps.
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