Fabrication of Ferroelectric Nanorod Capacitors for Ultrahigh Integrated FeRAMs

• Project/Area Number: 25630130
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Hyogo
• Principal Investigator: SHIMIZU MASARU 兵庫県立大学, 工学(系)研究科(研究院), 教授 (30154305)
• Co-Investigator(Renkei-kenkyūsha): FUJISAWA Hironori 兵庫県立大学, 大学院工学研究科, 准教授 (30285340) ; NAKASHIMA Seiji 兵庫県立大学, 大学院工学研究科, 助教 (80552702)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 強誘電体 / ナノロッド / ナノワイヤ / ナノキャパシタ / 超高集積強誘電体メモリ / 有機金属気相成長法 / 1次元構造 / 立体構造メモリ / 強誘電体メモリ / 強誘電体ナノキャパシタ / 酸化亜鉛 / チタン酸ジルコン酸鉛

Outline of Final Research Achievements

Ferroelectric　nanorod and nanowire capacitors were prepared by MOCVD (Metalorganic Chemical vapor Deposition) for ultrahigh integrated 3D ferroelectric random access memories (FeRAMs). At first stage, ZnO nanorods and nanowires as a positive template were fabricated on substrates using MOCVD. At second stage, ferroelectric Pb(Zr,Ti)O3 (PZT) or (Hf,Zr)O2 was deposited on ZnO nanorods (nanowires) using MOCVD. Finally, ZnO was deposited on them, and ZnO/PZT/ZnO and ZnO/(Hf,Zr)O2/ZnO nanorod (nanowire) capacitors were successfully fabricated. Selective growth of ZnO nanorods on patterned Pt was also successfully performed.

Research Products

• [Presentation] Ferroelectric Nanowires Prepared by MOCVD for 3D-FeRAMs (2014)
  • Author(s): M. Shimizu, S. Shinagawa, I. Kokado, S. Nakashima and H. Fujisawa
  • Organizer: Materials Research Society
  • Place of Presentation: Hyness Convention Center (Boston, MA, USA)
  • Year and Date: 2014-11-30 – 2014-12-05
• [Presentation] Low-Dimensional Ferroelectric Nanostructures (2014)
  • Author(s): M. Shimizu, H. Fujisawa and S. Nakashima
  • Organizer: International Seminar on Functional Ferroelectric Films for Future Electronic Devices and Systems
  • Place of Presentation: Kyoto Institute of Technology (Kyoto city , Kyoto)
  • Year and Date: 2014-11-19
  • Invited
• [Presentation] Fabrication of Ferroelectric Nanowire Capacitors by MOCVD (2014)
  • Author(s): I. Kokado, H. Fujisawa, S. Nakashima and M. Shimizu
  • Organizer: The IUMRS International Conference in Asia 2014
  • Place of Presentation: Fukuoka University (Fukuoka city, Fukuoka)
  • Year and Date: 2014-08-24 – 2014-08-30
• [Presentation] Fabrication of PZT/ZnO Core-Shell Nanorods with Different PZT Ticknesses by MOCVD (2013)
  • Author(s): C. Kobayashi, H. Fujisawa, S. Nkashima and M. Shimizu
  • Organizer: The 14th International Symposium on Organic and Inorganic Electric Materials and Related Nanotechnologies
  • Place of Presentation: 石川県立音楽堂、金沢
• [Presentation] Ptナノドット上へのZnOナノロッドの選択成長 (2013)
  • Author(s): 小林 千晃、藤澤 浩訓、中嶋 誠二、清水 勝
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学、京都
• [Presentation] Selective Growth of Ferroelectric Nanowires (2013)
  • Author(s): M. Shimizu, C. Kobayashi, H. Morimoto, S. Nakashima and H. Fujisawa
  • Organizer: 13 th International Meeting on Ferroelectricity
  • Place of Presentation: Auditorium Maximum, Krakow, Poland
• [Remarks] 兵庫県立大学大学院工学研究科電子情報工学専攻電子材料・デバイス研究グループホームページ
  • URL: http://www.eng.u-hyogo.ac.jp/eecs/eecs7/index_j.html
• [Remarks] 兵庫県立大学大学院工学研究科電気系工学専攻電子デバイス研究室ホームページ
  • URL: http://www.eng.u-hyogo.ac.jp/eecs/eecs7/index_j.html