New structure of pseudo N channel-type OFET to realize organic C-MOS inverters
| Project/Area Number |
25630131
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagaoka National College of Technology |
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Principal Investigator |
MINAGAWA Masahiro 長岡工業高等専門学校, 電子制御工学科, 准教授 (20584684)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 有機トランジスタ / 有機電界効果トランジスタ / 有機エレクトロニクス / 有機半導体 / 有機デバイス |
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| Outline of Final Research Achievements |
We attempted to decrease the drain current under the off-state (i.e., the off-current) by insertion of a blocking layer between an organic active layer and carrier generation layer in carrier-generation type organic field-effect transistors (CG-OFETs).
It is found in our study that the conduction current that flows through the interface between an organic active layer and carrier generation layer can be decreased by insertion of a blocking layer. Moreover, it is experimentally clarified that the off-current can be controlled by fine patterning the carrier-generation layer in CG-OFETs. It is supposed that these results are useful techniques for development of OFETs having a high ON/OFF ratio characteristic.
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Report
(3 results)
Research Products
(9 results)
