CMOS Radiation Detector Using Arrayed Correlation
| Project/Area Number |
25630139
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
OKADA Kenichi 東京工業大学, 理工学研究科, 准教授 (70361772)
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| Project Period (FY) |
2013-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 放射線センサ / SPAD / 発振器 |
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| Research Abstract |
In this work, a radiation detector using a CMOS chip has been studied. PET as a plastic scintillator generates ultraviolet light, and the light is detected by single-photon avalanche diode (SPAD) implemented on a CMOS chip. A bias voltage generation is very important to improve SPAD sensitivity. A SPAD array is self-calibrated for excluding defect-elements and having high bias voltage. A clock generation is also required to measure a dark count, and it is used for the calibration. A low-power and accurate on-chip clock generator is realized by using only standard cells.
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Report
(2 results)
Research Products
(4 results)
