Cr-based metal antiferromagnetic film applicable for high intergration spin devices
| Project/Area Number |
25630265
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | Osaka University |
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Principal Investigator |
NAKATANI Ryoichi 大阪大学, 工学(系)研究科(研究院), 教授 (60314374)
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| Co-Investigator(Kenkyū-buntansha) |
SHIRATSUCHI Yu 大阪大学, 大学院工学研究科, 准教授 (70379121)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | スピントロニクス / 反強磁性 / Cr / 交換磁気異方性 / X相Cr3Al / 磁性 / 薄膜 / Cr3Al |
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| Outline of Final Research Achievements |
We investigated the Cr-based antiferromagetic thin film which possesses the bcc-based crystal structure for the perpendicularly-magnetized spin valve film. In particular, we focused on the X-phase Cr3Al(001) thin film which is expected to possess the high magnetic moment and the high Neel temperature. Main results are (1) X-phase Cr3Al(001) epitaxial film grows on the MgO(001) substrate in the growth temperature range of 323 to 673 K and (2) the Au/Co/X-phase Cr3Al stacked films exhibit both perpendicular magnetic anisotropy and perpendicular exchange anisotropy.
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Report
(3 results)
Research Products
(4 results)
