High-speed epitaxial growth of cubic SiC film by laser CVD

• Project/Area Number: 25630273
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tohoku University
• Principal Investigator: GOTO Takashi 東北大学, 金属材料研究所, 教授 (60125549)
• Co-Investigator(Kenkyū-buntansha): ITO Akihiko 東北大学, 金属材料研究所, 助教 (20451635) ; KATSUI Hirokazu 東北大学, 金属材料研究所, 助教 (70610202)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 炭化ケイ素 / 化学気相析出 / レーザー / 高速成膜 / 高配向 / レーザーCVD / エピタキシャル成長

Outline of Final Research Achievements

Highly-oriented silicon carbide films were epitaxially grown at high deposition rates by laser chemical vapor deposition. The effects of CVD conditions on microstructure, oriented textures and deposition rates were investigated. The highly (111)-oriented 3C-SiC film was deposited at 200 μm/h, while the deposition rate of the (110)-oriented 3C-SiC film reached to 3600 μm/h.

Research Products

• [Journal Article] Growth Mechanism and Defects of <111>-Oriented b-SiC Films Deposited by Laser Chemical Vapor Deposition (2015)
  • Author(s): Song Zhang, Qingfang Xu, Rong Tu, Takashi Goto, Lianmeng Zhang
  • Journal Title: Journal of the American Ceramic Society Volume: 98 Issue: 1 Pages: 236-241
  • DOI: 10.1111/jace.13248
  • Peer Reviewed
• [Journal Article] Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition (2015)
  • Author(s): R. Hashimoto, A. Ito, T. Goto
  • Journal Title: Ceramics International Volume: 41 Issue: 5 Pages: 6898-6904
  • DOI: 10.1016/j.ceramint.2015.01.142
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] High-Speed Preparation of <111>- and <110>-Oriented b-SiC Films by Laser Chemical Vapor Deposition (2014)
  • Author(s): Song Zhang, Qingfang Xu, Rong Tu, Takashi Goto, and Lianmeng Zhang
  • Journal Title: Journal of the American Ceramic Society Volume: 97 Issue: 3 Pages: 952-958
  • DOI: 10.1111/jace.12706
  • Peer Reviewed
• [Presentation] レーザーCVD によるSiC の高速成膜と微細組織について (2014)
  • Author(s): 橋本龍真、伊藤暁彦、後藤孝
  • Organizer: 第52回セラミックス基礎科学討論会
  • Place of Presentation: 名古屋市
• [Presentation] レーザー CVD による β-SiC 膜の高速合成と成膜雰囲気の影響 (2014)
  • Author(s): 橋本龍真、伊藤暁彦、後藤孝
  • Organizer: 日本セラミックス協会 2014年 年会
  • Place of Presentation: 東京
• [Presentation] レーザーCVD によるSiC の高速成膜と成膜温度が微細組織に与える影響 (2013)
  • Author(s): 橋本龍真、伊藤暁彦、後藤孝
  • Organizer: 日本セラミックス協会東北北海道支部研究発表会
  • Place of Presentation: 長岡市
• [Presentation] Laser chemical vapor deposition for high-speed thick coating (2013)
  • Author(s): Takashi Goto
  • Organizer: 5th International Symposium on Advanced Ceramics
  • Place of Presentation: Wuhan, China
  • Invited