| Project/Area Number |
25630273
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
GOTO Takashi 東北大学, 金属材料研究所, 教授 (60125549)
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| Co-Investigator(Kenkyū-buntansha) |
ITO Akihiko 東北大学, 金属材料研究所, 助教 (20451635)
KATSUI Hirokazu 東北大学, 金属材料研究所, 助教 (70610202)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 炭化ケイ素 / 化学気相析出 / レーザー / 高速成膜 / 高配向 / レーザーCVD / エピタキシャル成長 |
|---|
| Outline of Final Research Achievements |
Highly-oriented silicon carbide films were epitaxially grown at high deposition rates by laser chemical vapor deposition. The effects of CVD conditions on microstructure, oriented textures and deposition rates were investigated. The highly (111)-oriented 3C-SiC film was deposited at 200 μm/h, while the deposition rate of the (110)-oriented 3C-SiC film reached to 3600 μm/h.
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