Exploring of I-III-VI2 oxide semiconductors and their new functions
| Project/Area Number |
25630283
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Osaka University |
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Principal Investigator |
OMATA Takahisa 大阪大学, 工学(系)研究科(研究院), 准教授 (80267640)
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| Co-Investigator(Renkei-kenkyūsha) |
OHASHI Naoki 物質, 材料研究機構, 部門長 (60251617)
YANAGI Hiroshi 山梨大学, 医学工学総合研究部, 准教授 (30361794)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 半導体物性 / 光物性 / ナノ材料 / 先端機能デバイス / 先端機能材料 |
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| Outline of Final Research Achievements |
Crystal structure of β-CuGaO2 was refined and its stability was evaluated using TG-DTA and high temperature XRD. Aa a result, this material is a metastable phase, but practically stable <300°C even under oxygen atmosphere. Impurity doping was attempted, and possibility of carrier injection by impurity doping was suggested. Based on the first principles density functional calculation, it was shown that β-CuGaO2 intensely absorb light around the fundamental absorption edge; therefore, it was shown that this material is a promising oxide semiconductor as a solar cell absorber.
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Report
(3 results)
Research Products
(28 results)
