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Exploring of I-III-VI2 oxide semiconductors and their new functions

Research Project

Project/Area Number 25630283
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Inorganic materials/Physical properties
Research InstitutionOsaka University

Principal Investigator

OMATA Takahisa  大阪大学, 工学(系)研究科(研究院), 准教授 (80267640)

Co-Investigator(Renkei-kenkyūsha) OHASHI Naoki  物質, 材料研究機構, 部門長 (60251617)
YANAGI Hiroshi  山梨大学, 医学工学総合研究部, 准教授 (30361794)
Project Period (FY) 2013-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords半導体物性 / 光物性 / ナノ材料 / 先端機能デバイス / 先端機能材料
Outline of Final Research Achievements

Crystal structure of β-CuGaO2 was refined and its stability was evaluated using TG-DTA and high temperature XRD. Aa a result, this material is a metastable phase, but practically stable <300°C even under oxygen atmosphere. Impurity doping was attempted, and possibility of carrier injection by impurity doping was suggested. Based on the first principles density functional calculation, it was shown that β-CuGaO2 intensely absorb light around the fundamental absorption edge; therefore, it was shown that this material is a promising oxide semiconductor as a solar cell absorber.

Report

(3 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Research-status Report
  • Research Products

    (28 results)

All 2015 2014 2013

All Journal Article (5 results) (of which Peer Reviewed: 4 results,  Open Access: 1 results,  Acknowledgement Compliant: 4 results) Presentation (23 results)

  • [Journal Article] Wurtzite-derived ternary I-III-O2 semiconductors2015

    • Author(s)
      T Omata, H Nagatani, I Suzuki and M Kita
    • Journal Title

      Science and Technology of Advanced Materials

      Volume: 16 Issue: 2 Pages: 024902-024902

    • DOI

      10.1088/1468-6996/16/2/024902

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Structural and Thermal Properties of Ternary Narrow-Gap Oxide Semiconductor; Wurtzite-Derived β-CuGaO22015

    • Author(s)
      Hiraku Nagatani, Issei Suzuki, Masao Kita, Masahiko Tanaka, Yoshio Katsuya, Osami Sakata, Shogo Miyoshi, Shu Yamaguchi, and Takahisa Omata
    • Journal Title

      Inorganic Chemistry

      Volume: 54 Issue: 4 Pages: 1698-1704

    • DOI

      10.1021/ic502659e

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Structure of β-AgGaO2; ternary I-III-VI2 oxide semiconductor with a wurtzite-derived structure2015

    • Author(s)
      Hiraku Nagatani, Issei Suzuki, Masao Kita, MasahikoTanaka, Yoshio Katsuya, Osami Sakata, Takahisa Omata
    • Journal Title

      Journal of Solid State Chemistry

      Volume: 222 Pages: 66-70

    • DOI

      10.1016/j.jssc.2014.11.012

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Ternary and Quaternary Wurtzite-type Oxide Semiconductors; New Materials and Their Properties2015

    • Author(s)
      T. Omata
    • Journal Title

      Proceedings of SPIE

      Volume: 9364 Pages: 93641L-93641L

    • DOI

      10.1117/12.2175570

    • Related Report
      2014 Annual Research Report
    • Acknowledgement Compliant
  • [Journal Article] Wurtzite CuGaO2: A New Direct and Narrow Band Gap Oxide2014

    • Author(s)
      Takahisa Omata, Hiraku Nagatani, Issei Suzuki, Masao Kita, Hiroshi Yanagi, Naoki Ohashi
    • Journal Title

      Journal of the American Chemical Society

      Volume: 136 Issue: 9 Pages: 3378-3381

    • DOI

      10.1021/ja501614n

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Presentation] 新規酸化物半導体:ウルツ鉱型 β-CuGaO22015

    • Author(s)
      鈴木一誓、長谷拓、喜多正雄、井口雄喜、佐藤千友紀、柳博、大橋直樹、小俣孝久
    • Organizer
      日本セラミックス 協会2015年 年会
    • Place of Presentation
      岡山大学
    • Year and Date
      2015-03-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] 「ウルツ鉱型β-CuGaO2の第一原理計算2015

    • Author(s)
      鈴木一誓、長谷拓、喜多正雄、井口雄喜、佐藤千友紀、柳博、大橋直樹、小俣孝久
    • Organizer
      日本セラミックス 協会2015年 年会
    • Place of Presentation
      岡山大学
    • Year and Date
      2015-03-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Ternary and Quaternary Wurtzite-type Oxide Semiconductors; New Materials and Their Properties2015

    • Author(s)
      T. Omata
    • Organizer
      SPIE: Photonics WEST2015; Oxidebased
    • Place of Presentation
      San Fransisco, USA
    • Year and Date
      2015-02-07 – 2015-02-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] CuAlO2との混晶化よるβ-CuGaO2のバンドギャップエンジニアリング2014

    • Author(s)
      水野 裕貴、長谷 拓、鈴木 一誓、小俣 孝久
    • Organizer
      資源素材学会関西支部 第11回・若手研究者・学生のための研究発表会
    • Place of Presentation
      京都大学
    • Year and Date
      2014-12-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Novel Ternary Wurtzite-type Semiconductor, β-CuGaO2014

    • Author(s)
      I. Suzuki, H. Nagatani, M. Kita, H. Yanagi, N. Ohashi and T. Omata
    • Organizer
      2014 MRS Fall Meeting & Exhibit
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-12-01 – 2014-12-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] First Principle Calculations of Wurtzite β-CuGaO2 and β-AgGaO22014

    • Author(s)
      I. Suzuki, H. Nagatani, M. Kita, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi and T. Omata
    • Organizer
      2014 MRS Fall Meeting & Exhibit
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-12-01 – 2014-12-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] Phase transition of Zn2LiGaO4–ZnO alloy at high temperature2014

    • Author(s)
      M. Kita, T. Fukada and T. Omata
    • Organizer
      2014 MRS Fall Meeting & Exhibi
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-12-01 – 2014-12-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] First Principle Calculation of Electronic Band Structure of Wurtzite β-CuGaO2 and β-AgGaO22014

    • Author(s)
      I. Suzuki, H. Nagatani, M. Kita, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi and T. Omata
    • Organizer
      8th International Workshop on Zinc Oxide and Related Materials
    • Place of Presentation
      Niagara Falls, Canada
    • Year and Date
      2014-09-07 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Band Gap Narrowing of ZnO by Alloying with β-AgGaO22014

    • Author(s)
      I. Suzuki, Y. Arima, M. Kita, T. Omata.
    • Organizer
      8th International Workshop on Zinc Oxide and Related Materials
    • Place of Presentation
      Niagara Falls, Canada
    • Year and Date
      2014-09-07 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] A New Ternary Oxide Semiconductor; Wurtzite CuGaO22014

    • Author(s)
      H. Nagatani, I. Suzuki, M. Kita, H. Yanagi, N. Ohashi and T. Omata
    • Organizer
      8th International Workshop on Zinc Oxide and Related Materials
    • Place of Presentation
      Niagara Falls, Canada
    • Year and Date
      2014-09-07 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] Wurtzite I-III-O2 Ternary Oxide Semiconductors; New Mtaerials and Application2014

    • Author(s)
      T. Omata
    • Organizer
      8th International Workshop on Zinc Oxide and Related Materials
    • Place of Presentation
      Niagara Falls, Canada
    • Year and Date
      2014-09-07 – 2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] ウルツ鉱型β-CuGaO2、β-AgGaO2の第一原理計算2014

    • Author(s)
      鈴木一誓、長谷拓、喜多正雄、井口雄喜、佐藤千友紀、柳博、大橋直樹、小俣孝久
    • Organizer
      第9回日本セラミックス協会関西支部学術講演会
    • Place of Presentation
      大阪府立大学
    • Year and Date
      2014-07-25
    • Related Report
      2014 Annual Research Report
  • [Presentation] 直接遷移型ナローギャップ半導体;ウルツ鉱型β-CuGaO22014

    • Author(s)
      長谷拓、鈴木一誓、喜多正雄、柳博、田中雅彦、勝矢良雄、坂田修身、大橋直樹、小俣孝久
    • Organizer
      第9回日本セラミックス協会関西支部学術講演会
    • Place of Presentation
      大阪府立大学
    • Year and Date
      2014-07-25
    • Related Report
      2014 Annual Research Report
  • [Presentation] CuAlO2との混晶化によるウルツ鉱型CuGaO2のバンドギャップエンジニアリング2014

    • Author(s)
      水野裕貴、長谷拓、鈴木一誓、喜多正雄、小俣孝久
    • Organizer
      第9回日本セラミックス協会関西支部学術講演会
    • Place of Presentation
      大阪府立大学
    • Year and Date
      2014-07-25
    • Related Report
      2014 Annual Research Report
  • [Presentation] First Principle Calculations of Electronic Band Structures of Wurtzite β-CuGaO2 and β-AgGaO22014

    • Author(s)
      I. Suzuki, H. Nagatani, M. Kita, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi and T. Omata
    • Organizer
      The Eighth International Conference on the Science and Technology for Advanced Ceramics (STAC8)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2014-06-25 – 2014-06-27
    • Related Report
      2014 Annual Research Report
  • [Presentation] A New Direct and Narrow Band Gap Oxide Semiconductor; Wurtzite CuGaO22014

    • Author(s)
      H. Nagatani, I. Suzuki, M. Kita, H. Yanagi, N. Ohashi and T. Omata
    • Organizer
      The Eighth International Conference on the Science and Technology for Advanced Ceramics (STAC8)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2014-06-25 – 2014-06-27
    • Related Report
      2014 Annual Research Report
  • [Presentation] 新規酸化物半導体材料の探索;ウルツ鉱型I-III-O2化合物半導体2014

    • Author(s)
      小俣孝久
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院淵野辺キャンパス(相模原)
    • Related Report
      2013 Research-status Report
  • [Presentation] AgGaO2との混晶化によるZnOのバンドギャップナローイング2014

    • Author(s)
      鈴木一誓、長谷拓、有馬優太、喜多正雄、小俣孝久
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院淵野辺キャンパス(相模原)
    • Related Report
      2013 Research-status Report
  • [Presentation] 直接遷移型ナローギャップ半導体; ウルツ鉱型β-CuGaO22014

    • Author(s)
      長谷拓、鈴木一誓、喜多正雄、柳博、大橋直樹、小俣孝久
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院淵野辺キャンパス(相模原)
    • Related Report
      2013 Research-status Report
  • [Presentation] 鈴木一誓、長谷拓、喜多正雄、井口雄喜、佐藤千友紀、柳博、大橋直樹、小俣孝久2014

    • Author(s)
      第一原理計算によるウルツ鉱型β-CuGaO2,β-AgGaO2の電子構造解析
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院淵野辺キャンパス(相模原)
    • Related Report
      2013 Research-status Report
  • [Presentation] ウルツ鉱型酸化物半導体&#61538;-AgGaO2, &#61538;-CuGaO2の伝導性制御2014

    • Author(s)
      長谷拓、鈴木一誓、常深浩、井藤幹夫、喜多正雄、小俣孝久
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院淵野辺キャンパス(相模原)
    • Related Report
      2013 Research-status Report
  • [Presentation] New Pseudo-Binary Alloying System of x(AgGaO2)1/2-(1-x)ZnO for Band Gap Narrowing of ZnO2013

    • Author(s)
      I. Suzuki, Y. Arima, M. Kita ,T. Omata
    • Organizer
      013 MRS Spring Meeting
    • Place of Presentation
      サンフランシスコ、米国
    • Related Report
      2013 Research-status Report
  • [Presentation] Band Gap Narrowing of ZnO by Alloying with β-AgGaO22013

    • Author(s)
      I. Suzuki, Y. Arima, M. Kita, T. Omata
    • Organizer
      8th International Symposium on Transparent Oxide Thin Films for Electronics and Optics
    • Place of Presentation
      早稲田大学(東京)
    • Related Report
      2013 Research-status Report

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Published: 2014-07-25   Modified: 2019-07-29  

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