Study of plasma-solid surface interaction control for future organic devices with the optimized dielectric constants

• Project/Area Number: 25630293
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Composite materials/Surface and interface engineering
• Research Institution: Kyoto University
• Principal Investigator: ERIGUCHI Koji 京都大学, 工学(系)研究科(研究院), 准教授 (70419448)
• Co-Investigator(Kenkyū-buntansha): ONO Kouichi 京都大学, 大学院工学研究科, 教授 (30311731) ; TAKAO Yoshinori 横浜国立大学, 大学院工学研究院, 准教授 (80552661)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: プラズマ / 誘電率 / 欠陥 / 有機膜 / シリコン / 有機材料 / 電気容量

Outline of Final Research Achievements

We focused on the defect generation process in dielectric films (SiOC films) by low pressure plasma exposures to realize future highly reliable organic devices. We proposed a method quantifying the density of defects created by the plasma exposure, employing the capacitance-voltage measurement of the dielectric films. It was clarified that the nano-scaled indentation modulus as well as the effective dielectric constant strongly depend on the plasma process condition. The interaction between the localized defects and the microwave irradiated were investigated. The present findings provide a key guideline for novel organic device designs in the future.

Research Products

• [Journal Article] Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate (2015)
  • Author(s): Y. Nakakubo, K. Eriguchi, K. Ono
  • Journal Title: ECS Journal of Solid State Science and Technology Volume: 4 Issue: 6 Pages: N5077-N5083
  • DOI: 10.1149/2.0121506jss
  • NAID: 120005756254
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability (2015)
  • Author(s): K. Eriguchi, K. Ono
  • Journal Title: Microelectronics Reliability Volume: 55 Issue: 9-10 Pages: 1464-1470
  • DOI: 10.1016/j.microrel.2015.07.004
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate (2015)
  • Author(s): T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono
  • Journal Title: J. Vac. Sci. Technol. A Volume: 33 Issue: 6 Pages: 061403-061403
  • DOI: 10.1116/1.4927128
  • Peer Reviewed
• [Journal Article] Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors (2014)
  • Author(s): K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
  • Journal Title: Jpn. J. Appl. Phys Volume: 53 Issue: 3S2 Pages: 03DE02-03DE02
  • DOI: 10.7567/jjap.53.03de02
  • NAID: 210000143495
  • Peer Reviewed
• [Journal Article] Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma- induced Si substrate damage (2014)
  • Author(s): T. Okumura, K. Eriguchi, M. Saitoh, H. Kawaura
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Issue: 3S2 Pages: 03DG01-03DG01
  • DOI: 10.7567/jjap.53.03dg01
  • NAID: 210000143499
  • Peer Reviewed
• [Journal Article] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique (2014)
  • Author(s): M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Issue: 3S2 Pages: 03DB02-03DB02
  • DOI: 10.7567/jjap.53.03db02
  • Peer Reviewed
• [Presentation] 層間絶縁膜へのプラズマダメージの電気的解析手法 (2016)
  • Author(s): 西田健太郎、岡田行正、鷹尾祥典、江利口浩二、斧高一
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-19
• [Presentation] プラズマプロセス誘起ダメージによるデバイス特性劣化の包括的モデル (2016)
  • Author(s): 江利口浩二、斧高一
  • Organizer: 応用物理学会シリコンテクノロジー分科会
  • Place of Presentation: 宝塚大学梅田キャンパス
  • Year and Date: 2016-02-27
  • Invited
• [Presentation] Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate (2015)
  • Author(s): Y. Okada, K. Eriguchi, K. Ono
  • Organizer: Proc. 37th International Symposium on Dry Process
  • Place of Presentation: Hyogo, Japan
  • Year and Date: 2015-11-05
  • Int'l Joint Research
• [Presentation] A new evaluation method to characterize low-k dielectric damage during plasma processing (2015)
  • Author(s): K. Nishida, Y. Okada, Y. Takao, K. Eriguchi, K. Ono
  • Organizer: Proc. 37th International Symposium on Dry Process
  • Place of Presentation: Hyogo, Japan
  • Year and Date: 2015-11-05
  • Int'l Joint Research
• [Presentation] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability (2015)
  • Author(s): K. Eriguchi
  • Organizer: The 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
  • Place of Presentation: Toulouse, France
  • Year and Date: 2015-10-07
  • Int'l Joint Research / Invited
• [Presentation] Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing (2015)
  • Author(s): Y. Okada, K. Eriguchi, K. Ono
  • Organizer: IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
  • Place of Presentation: Leuven, Belgium
  • Year and Date: 2015-06-02
  • Int'l Joint Research
• [Presentation] Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout (2015)
  • Author(s): T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, and K. Ono
  • Organizer: IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
  • Place of Presentation: Leuven, Belgium
  • Year and Date: 2015-06-02
  • Int'l Joint Research
• [Presentation] Modeling of Plasma-induced Damage in Advanced Transistors in ULSI Circuits (2015)
  • Author(s): K. Eriguchi
  • Organizer: Semiconductor Equipment and Materials International (SEMI) Korea, Technology Symposium
  • Place of Presentation: Seoul, South Korea
  • Year and Date: 2015-02-05
  • Invited
• [Presentation] A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs (2014)
  • Author(s): K. Eriguchi, K. Ono
  • Organizer: 36th International Symposium on Dry Process (DPS)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2014-11-27 – 2014-11-28
• [Presentation] Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method (2014)
  • Author(s): M. Noma, K. Eriguchi, S. Hasegawa, M. Yamashita, K. Ono
  • Organizer: 36th International Symposium on Dry Process (DPS)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2014-11-27 – 2014-11-28
• [Presentation] Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface (2014)
  • Author(s): T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono
  • Organizer: 36th International Symposium on Dry Process (DPS)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2014-11-27 – 2014-11-28
• [Presentation] Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation - (2014)
  • Author(s): T. Ikeda, K. Eriguchi, A. Tanihara, S. Kasai, K. Ono
  • Organizer: 36th International Symposium on Dry Process (DPS)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2014-11-27 – 2014-11-28
• [Presentation] Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits - A model prediction of damage in three dimensional structures (2014)
  • Author(s): K. Eriguchi
  • Organizer: 67th Annual Gaseous Electronics Conference
  • Place of Presentation: Raleigh, NC, USA
  • Year and Date: 2014-11-03 – 2014-11-07
  • Invited
• [Presentation] A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures (2014)
  • Author(s): K. Eriguchi, Y. Takao, K. Ono
  • Organizer: IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
  • Place of Presentation: Austin, TX, USA
  • Year and Date: 2014-05-29 – 2014-05-30
• [Presentation] Plasma-Induced Damage in 3D Structures behind Device Scaling (2014)
  • Author(s): K. Eriguchi, Y. Takao, K. Ono
  • Organizer: Plasma Etch and Strip in Microtechnology (PESM)
  • Place of Presentation: Grenoble, France
  • Year and Date: 2014-05-11 – 2014-05-12
• [Presentation] micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage (2013)
  • Author(s): A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
  • Organizer: Dry Process Symposium
  • Place of Presentation: Jeju, Korea
• [Presentation] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique (2013)
  • Author(s): M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
  • Organizer: Dry Process Symposium
  • Place of Presentation: Jeju, Korea
• [Remarks] 京都大学 航空宇宙工学専攻 推進工学分野 (斧・江利口研)
  • URL: http://www.propulsion.kuaero.kyoto-u.ac.jp/
• [Remarks] 京都大学 航空宇宙工学専攻 推進工学分野 (斧・江利口・鷹尾 研)
  • URL: http://www.propulsion.kuaero.kyoto-u.ac.jp/
• [Remarks] 京都大学 航空宇宙工学専攻 推進工学分野 (斧・江利口・鷹尾 研)
  • URL: http://www.propulsion.kuaero.kyoto-u.ac.jp/