Control of magnetic property in dopant lattice
| Project/Area Number |
25706003
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Nanostructural physics
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| Research Institution | Shizuoka University (2015)
University of Toyama |
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Principal Investigator |
Hori Masahiro 静岡大学, 電子工学研究所, 講師 (50643269)
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| Research Collaborator |
ONO Yukinori 静岡大学, 電子工学研究所, 教授 (80374073)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2014: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2013: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000)
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| Keywords | 量子準位 / チャージポンピング法 / 電子スピン共鳴法 / EDMR / シリコン / MOSFET / 界面欠陥 / ドーパント原子 / シリコントランジスタ / 局在準位 / 電子捕獲過程 / 半導体物性 / 電子スピン共鳴 / EDMR法 / 不純物原子 |
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| Outline of Final Research Achievements |
In this research project, I have established two methods towards the ultimate control of electronic charges and spins based on silicon transistors. One is the time domain charge pumping, which is a method for detecting the current flow in a MOS transistor in time domain. The method enables us to analyze the dynamics of electronic charges in localized states (such as dopant atoms and interface defects) in detail. The other is the electrically detected magnetic resonance (EDMR), which is a method for detecting the spin resonance of electrons in localized states. Here, I successfully obtained the EDMR signals based on electron-hole recombination process at the defect states.
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Report
(4 results)
Research Products
(34 results)
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[Presentation] ESR measurements of As donor electrons in silicon2015
Author(s)
M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
Organizer
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
Place of Presentation
TOKI MESSE Niigata Convention Center Niigata, Japan
Year and Date
2015-06-16 – 2015-06-19
Related Report
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[Presentation] ESR measurements of As donor electrons in silicon2015
Author(s)
M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
Organizer
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
Place of Presentation
TOKI MESSE Niigata Convention Center Niigata, Japan
Year and Date
2015-06-16
Related Report
Int'l Joint Research
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[Presentation] Charge Puming in SOI Gated PIN Diode2015
Author(s)
T. Watanabe, M. Hori, T. Saruwatari, T. Tsuchiya, A. Fujiwara, Y. Ono
Organizer
Silicon Nanoelectronics Workshop 2015
Place of Presentation
Rega Royal Hotel Kyoto, Japan
Year and Date
2015-06-14 – 2015-06-15
Related Report
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[Presentation] Charge Puming in SOI Gated PIN Diode2015
Author(s)
T. Watanabe, M. Hori, T. Saruwatari, T. Tsuchiya, A. Fujiwara, Y. Ono
Organizer
2015 Silicon Nanoelectronics Workshop (SNW-2015)
Place of Presentation
Rega Royal Hotel Kyoto, Japan
Year and Date
2015-06-14
Related Report
Int'l Joint Research
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[Presentation] ESR study on pure single crystalline sapphire
Author(s)
M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
Organizer
The Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013)
Place of Presentation
University of Tsukuba, Tsukuba, Japan
Related Report
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