| Budget Amount *help |
¥22,100,000 (Direct Cost: ¥17,000,000、Indirect Cost: ¥5,100,000)
Fiscal Year 2015: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2014: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2013: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Outline of Final Research Achievements |
Mono-like method is a next-generation manufacture process for solar cells to grow quasi-single crystalline silicon in a crucible with low production cost. The purpose of this study is to reveal generation mechanism of dislocations from seed joints (grain boundaries) during crystal growth of mono-like silicon. We performed (1) growth and characterization of mono-like silicon crystals with various grain boundary structure, (2) quantitative characterization of dislocations and grain boundaries using PL imaging, and (3) stress analysis using finite element method. We found correlations between grain boundary structure and stress applied on dislocations and between the structure and dislocation generation.
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