Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2014: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2013: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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Outline of Final Research Achievements |
Laser annealing process is popular way of changing amorphous Si to polycrystalline Si. In this study, we applied laser annealing technique to the precursor of organic semiconductor in order to induce thermal conversion, local patterning and control of the molecular orientation in the films. The effects of laser irradiation on the thermal conversion behavior, molecular orientation, structure and morphology of the films were investigated in detail. We demonstrated that proposed laser annealing process was one of basic technologies common to printed electronics.
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