Development of fundamental crystal growth technology of In-based nitride alloy semiconductors
| Project/Area Number |
25706020
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Kogakuin University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥23,400,000 (Direct Cost: ¥18,000,000、Indirect Cost: ¥5,400,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2014: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2013: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Keywords | 結晶成長 / 窒化物半導体 / InGaN / 分子線エピタキシー（MBE） / エピタキシャル成長 / 電子・電気材料 / 半導体物性 / MBE、エピタキシャル |
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| Outline of Final Research Achievements |
This research was focused on high-In composition In-based nitride semiconductors, and the development of fundamental crystal growth technologies, including the fabrication of high-quality crystal and the control of surface band structure, of these materials was carried out.
The pn-InGaN LED was fabricated utilizing growth technologies we obtained. Based on the problems of the characteristics of this LED, the growth mechanism of InGaN was further understood by introducing a novel monitoring technology during growth. The development of the fabrication technology of the buffer layer for the growth of InGaN, which is universal for entire alloy composition, was challengingly carried out. The comprehensive studies including physical properties for the InGaN films with entire alloy compositions we obtained were also carried out.
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Report
(5 results)
Research Products
(63 results)
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[Presentation] Study on Mist CVD Growth of IN2O32016
Author(s)
T. Yamaguchi, T. Kobayashi, K. Tanuma, H. Nagai, T. Onuma, M. Sato, T. Honda
Organizer
2016 international Symposium on Novel and Sustainable Technology (2016ISNST)
Place of Presentation
Taiwan
Year and Date
2016-10-06
Related Report
Int'l Joint Research / Invited
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[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-Doped InN Epilayer by Hard X-Ray Photoelectron Spectroscopy2016
Author(s)
M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi
Organizer
International Workshop on Nitride Semiconductors (IWN 2016)
Place of Presentation
Orlando, Florida, USA
Year and Date
2016-10-02
Related Report
Int'l Joint Research
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[Presentation] Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE2014
Author(s)
T. Honda, T. Yamaguchi, Y. Sugiura, D. Isono, Y. Watanabe, S. Osawa, D. Tajimi, T. Iwabuchi, S. Kuboya, T. Tanikawa, R. Katayama and T. Matsuoka
Organizer
18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
Place of Presentation
Arizona, USA
Year and Date
2014-09-09
Related Report
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[Presentation] Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes2014
Author(s)
T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda
Organizer
International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014)
Place of Presentation
Fujuoka, Japan
Year and Date
2014-08-25
Related Report
Invited
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