| Budget Amount *help |
¥26,390,000 (Direct Cost: ¥20,300,000、Indirect Cost: ¥6,090,000)
Fiscal Year 2015: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000)
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| Outline of Final Research Achievements |
Metal-insulator transition was electrostatically tuned in a strongly correlated electron system, SrVO3 ultra-thin film with an electric double layer configuration with an ionic liquid electrolyte. The device worked as a Mott transistor. Although a SrVO3 bulk single crystal is a good metal, a ultra-thin film with a thickness less than 10 mono-layer is a Mott insulator due to low dimensionality. We found that an insulating film showed insulator-to-metal transition by n-type doping. In addition, we also found that a thicker film with metallic conduction showed a transition from metal to insulator with the same n-type doping. We examined gate induced metal-insulator transition in films with various thickness, and draw a electronic phase diagram of the two dimensional Mott insulator SrVO3. The phase diagram has large insulator area and narrow metallic area around n = 1, contrasting to a conventional Mott insulator phase diagram with a narrow insulator area in a large metallic area.
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