Development of new field-effect device with ionic liquid gating
| Project/Area Number |
25708039
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Device related chemistry
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| Research Institution | The University of Tokyo |
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Principal Investigator |
UENO Kazunori 東京大学, 総合文化研究科, 准教授 (10396509)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥26,390,000 (Direct Cost: ¥20,300,000、Indirect Cost: ¥6,090,000)
Fiscal Year 2015: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000)
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| Keywords | 電気二重層トランジスタ / モットトランジスタ / イオン液体 / 強相関電子系 / 遷移金属酸化物 / 金属絶縁体転移 / 電界効果トランジスタ / モット絶縁体 / 単結晶薄膜 / 酸化物半導体 |
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| Outline of Final Research Achievements |
Metal-insulator transition was electrostatically tuned in a strongly correlated electron system, SrVO3 ultra-thin film with an electric double layer configuration with an ionic liquid electrolyte. The device worked as a Mott transistor. Although a SrVO3 bulk single crystal is a good metal, a ultra-thin film with a thickness less than 10 mono-layer is a Mott insulator due to low dimensionality. We found that an insulating film showed insulator-to-metal transition by n-type doping. In addition, we also found that a thicker film with metallic conduction showed a transition from metal to insulator with the same n-type doping. We examined gate induced metal-insulator transition in films with various thickness, and draw a electronic phase diagram of the two dimensional Mott insulator SrVO3. The phase diagram has large insulator area and narrow metallic area around n = 1, contrasting to a conventional Mott insulator phase diagram with a narrow insulator area in a large metallic area.
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Report
(4 results)
Research Products
(23 results)
