| Project/Area Number |
25708040
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (A)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Research Field |
Device related chemistry
|
|---|
| Research Institution | The University of Tokyo (2014)
Tohoku University (2013) |
|---|
Principal Investigator |
NAKANO Masaki 東京大学, 工学(系)研究科(研究院), 講師 (70592228)
|
|---|
| Project Period (FY) |
2013-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2014: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2013: ¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
|
|---|
| Keywords | 表面・界面物性 / 強相関エレクトロニクス / 電界効果 |
|---|
| Outline of Final Research Achievements |
The idea of utilizing very large capacitance of electric-double layer (EDL) at a solid/electrolyte interface as a gate dielectric of field-effect transistors, namely EDL transistors (EDLTs), significantly increases a limit of the amount of surface charges controllable by electric-field effect, leading to remarkable demonstrations such as electric-field induced superconductivity and ferromagnetism. We have applied this EDLT technique to strongly-correlated materials, and found that EDLTs based on an archetypal correlated oxide, VO2, enables electrical switching of bulk state of matter beyond the fundamental electrostatic screening length, leading to remarkable changes in the infrared transmittance and the out-of-plane lattice parameter. These functions are not available with conventional field-effect devices based on band insulators, potentially beneficial for future low-energy-consumption electronics beyond conventional silicon-based technologies.
|
