Investigation of Characteristics Control Method for Long-wavelength Transistor Lasers and Demonstration of their Adaptability to Next Generation Network
| Project/Area Number |
25709026
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2013: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Keywords | 半導体レーザ / InP / トランジスタレーザ / フォトニックネットワーク / 光デバイス / 光回路 |
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| Outline of Final Research Achievements |
To adapt the increase of the bandwidth for future photonic networks, it is expected to realize direct modulated lasers which have faster modulation bandwidth beyond conventional semiconductor lasers.
First, by theoretical discussion, design guidelines to reduce the parasitic capacitance of transistor lasers, which were a big issue for conventional transistor lasers, were established. And in actual fabrication, better static characteristics and dynamic characteristics, which agreed with the theoretical calculation, were demonstrated. Therefore, this proved the effectiveness of the theoretical discussion in this project.
Because of these results, outlook and ways to realize transistor lasers with enough performances for future high speed network are shown.
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Report
(5 results)
Research Products
(27 results)
