Three dimensional manipulation of spin current in silicon
Project/Area Number |
25709027
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Partial Multi-year Fund |
Research Field |
Electron device/Electronic equipment
|
Research Institution | Kyoto University (2014-2015) Osaka University (2013) |
Principal Investigator |
Ando Yuichiro 京都大学, 工学(系)研究科(研究院), 助教 (50618361)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥26,520,000 (Direct Cost: ¥20,400,000、Indirect Cost: ¥6,120,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥23,270,000 (Direct Cost: ¥17,900,000、Indirect Cost: ¥5,370,000)
|
Keywords | スピン流 / シリコン / スピン操作 / Spin MOSFET / スピン流輸送 / シリコンスピントロニクス / スピン流制御 |
Outline of Final Research Achievements |
Silicon (Si) spintronics is becoming a pivotal field in semiconductor spintronics. Si is a light element and its crystal structure possesses a spatial inversion symmetry, which enable good spin coherence. Furthermore, Si spintronics devices have good compatibility with existing Si-LSI(large scale integration ) technologies. In this study, we investigated manipulation of a spin current in Si at room temperature. By applying perpendicular magnetic field spin precession more than 4 π was realized. Furthermore, long spin transport more than 21 micro meter and gate modulation of the spin transport signals were achieved at room temperature.
|
Report
(4 results)
Research Products
(11 results)
-
-
-
-
-
[Journal Article] Spin drift in highly doped n-type Si2014
Author(s)
Makoto Kameno, Yuichiro Ando, Teruya Shinjo, Hayato Koike, Tomoyuki Sasaki, Tohru Oikawa, Toshio Suzuki, and Masashi Shiraishi
-
Journal Title
Applied Physics Letters
Volume: 104
Issue: 9
Pages: 92409-92409
DOI
Related Report
Peer Reviewed
-
-
-
-
-
-