Clarification of growth mechanism of high-quality iron-based superconductor films and construction of growth technique of films exhibiting high performance
Project/Area Number |
25709058
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Partial Multi-year Fund |
Research Field |
Inorganic materials/Physical properties
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
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Project Period (FY) |
2013-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥26,130,000 (Direct Cost: ¥20,100,000、Indirect Cost: ¥6,030,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2013: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
|
Keywords | パルスレーザー堆積法 / エピタキシャル成長 / 超伝導 / 磁束ピニング / 臨界電流 |
Outline of Final Research Achievements |
Using pulsed laser deposition (PLD) employing 4 types of pulsed lasers, we explored the growth condition to obtain high quality BaFe2As2:Co thin films, and found that the optimum growth rate is constant to be 0.3nm/sec even if we employ different pulsed lasers for PLD. Further, we applied this optimized process to growth of BaFe2As2:P that we can expect higher critical temperature (~30 K) than that of BaFe2As2:Co (~20 K). Consequently, we succeeded in achieving high-performance critical current density of 7 MA/cm2, which is almost the same as the level of the final target (10 MA/cm2) for this research. Additionally, we fabricated the films on practically applied metal-tape substrates and achieved high performance practical level Jc of 0.1 MA/cm2 at 15 T.
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Report
(5 results)
Research Products
(38 results)
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[Presentation] Ba1-xLaxFe2As2薄膜の結晶構造2017
Author(s)
小林賢介, 中尾朗子, 真木祥千子, 山浦淳一, 片瀬貴義, 佐藤光, 佐賀山基, 熊井玲児, 村上洋一, 平松秀典, 細野秀雄
Organizer
日本物理学会 第72回年次大会
Place of Presentation
大阪
Year and Date
2017-03-17
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