| Budget Amount *help |
¥26,130,000 (Direct Cost: ¥20,100,000、Indirect Cost: ¥6,030,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2013: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
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| Outline of Final Research Achievements |
Using pulsed laser deposition (PLD) employing 4 types of pulsed lasers, we explored the growth condition to obtain high quality BaFe2As2:Co thin films, and found that the optimum growth rate is constant to be 0.3nm/sec even if we employ different pulsed lasers for PLD. Further, we applied this optimized process to growth of BaFe2As2:P that we can expect higher critical temperature (~30 K) than that of BaFe2As2:Co (~20 K). Consequently, we succeeded in achieving high-performance critical current density of 7 MA/cm2, which is almost the same as the level of the final target (10 MA/cm2) for this research. Additionally, we fabricated the films on practically applied metal-tape substrates and achieved high performance practical level Jc of 0.1 MA/cm2 at 15 T.
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