Budget Amount *help |
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2015: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
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Outline of Final Research Achievements |
To fabricate through silicon via (TSV) into ultra narrow and high-aspect-ratio features, supercritical fluid deposition (SCFD), which utilizes chemical reactions in supercritical fluid, was studied. Deposition of metal films on insulative surface and improvement of filling capability are the issues, and were solved by development of composition-modulated CuMnOx buffer layer that was enabled by newly developed continuous reactor and optimization of the deposition conditions to maximize filling capability based on the solubility of source precursors in supercritical fluid. We eventually succeeded to fill Cu into silicon trench structure with aspect ratio exceeding 100.
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