Single-step fabrication of untra narrow through silicon via for 3-dimensional integration of electronic devices
Project/Area Number |
25709075
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Partial Multi-year Fund |
Research Field |
Reaction engineering/Process system
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Research Institution | The University of Tokyo |
Principal Investigator |
Momose Takeshi 東京大学, 工学(系)研究科(研究院), 講師 (10611163)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2015: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
|
Keywords | 超臨界流体 / 製膜 / 3次元実装 / Cu / 超臨界 |
Outline of Final Research Achievements |
To fabricate through silicon via (TSV) into ultra narrow and high-aspect-ratio features, supercritical fluid deposition (SCFD), which utilizes chemical reactions in supercritical fluid, was studied. Deposition of metal films on insulative surface and improvement of filling capability are the issues, and were solved by development of composition-modulated CuMnOx buffer layer that was enabled by newly developed continuous reactor and optimization of the deposition conditions to maximize filling capability based on the solubility of source precursors in supercritical fluid. We eventually succeeded to fill Cu into silicon trench structure with aspect ratio exceeding 100.
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Report
(4 results)
Research Products
(4 results)
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[Journal Article] Solubility of bis-(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) in mixed supercritical CO2 and H2 systems for application in supercritical fluid deposition of Cu2015
Author(s)
Takeshi Momose, Aiko Kondo, Tatsuya Kamiya, Hideo Yamada, Junji Ohara, Yasuhiro Kitamura, Hirohisa Uchida, Yukihiro Shimogaki, and Masakazu Sugiyama
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Journal Title
Journal of Supercritical Fluids
Volume: 未定
Pages: 193-200
DOI
Related Report
Peer Reviewed
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