Conduction mechanism for nitrogen-doped graphene by low-temperature synthesis
| Project/Area Number |
25790025
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanomaterials engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
OKIGAWA Yuki 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 研究員 (50635315)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | グラフェン / 窒素 / ドーピング / プラズマ / プラズマＣＶＤ / 窒素ドープ / 差動排気システム |
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| Outline of Final Research Achievements |
Plasma chemical vapor deposition (CVD) is advantageous for low-temperature, high-throughput, and large-area synthesis for carbon materials. We have synthesized nitrogen-doped graphene films by plasma CVD to clarify the electrical properties for that graphene films. The actual partial pressures of methane and nitrogen gases during graphene synthesis were measured directly by mass spectrometry. Controlling small amounts of flow rates for methane and nitrogen gases by this technique, nitrogen-doped graphene films were synthesized.
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Report
(5 results)
Research Products
(3 results)
