Conduction mechanism for nitrogen-doped graphene by low-temperature synthesis

Research Project

Project/Area Number	25790025
Research Category	Grant-in-Aid for Young Scientists (B)
Allocation Type	Multi-year Fund
Research Field	Nanomaterials engineering
Research Institution	National Institute of Advanced Industrial Science and Technology
Principal Investigator	OKIGAWA Yuki 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 研究員 (50635315)
Project Period (FY)	2013-04-01 – 2016-03-31
Project Status	Completed (Fiscal Year 2015)
Budget Amount *help	¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000) Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000) Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000) Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords	グラフェン / 窒素 / ドーピング / プラズマ / プラズマＣＶＤ / 窒素ドープ / 差動排気システム
Outline of Final Research Achievements	Plasma chemical vapor deposition (CVD) is advantageous for low-temperature, high-throughput, and large-area synthesis for carbon materials. We have synthesized nitrogen-doped graphene films by plasma CVD to clarify the electrical properties for that graphene films. The actual partial pressures of methane and nitrogen gases during graphene synthesis were measured directly by mass spectrometry. Controlling small amounts of flow rates for methane and nitrogen gases by this technique, nitrogen-doped graphene films were synthesized.

Report

(5 results)