Control of the electronic phase of transition-metal oxides exhibiting a first-order phase transition

• Project/Area Number: 25790051
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Shibuya Keisuke 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 研究員 (00564949)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 二酸化バナジウム / 金属－絶縁体転移 / 電子相転移 / 酸化物エピタキシャル薄膜 / 電界効果トランジスタ

Outline of Final Research Achievements

Thin films and field-effect device structures of transition-metal oxides which show a first-order phase transition were fabricated with an aim of application utilizing strongly correlated electron materials. The electronic phase of vanadium dioxide was controlled in a nonvolatile by an electric field, which indicates a possibility of nonvolatile device application by controlling the electronic phase. Thin films of vanadium dioxide were fabricated on silicon substrates by controlling substrate temperature and oxygen pressure precisely during the deposition. The films exhibited a huge change in their optical properties.

Research Products

• [Journal Article] Modulation of metal–insulator transition in VO2 by electrolyte gating-induced protonation (2016)
  • Author(s): Keisuke Shibuya, Akihito Sawa
  • Journal Title: Advanced Electronic Materials Volume: 2 Issue: 2
  • DOI: 10.1002/aelm.201500131
  • Peer Reviewed
• [Journal Article] Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition (2015)
  • Author(s): Keisuke Shibuya, Akihito Sawa
  • Journal Title: AIP advances Volume: 5 Issue: 10
  • DOI: 10.1063/1.4934226
  • Peer Reviewed / Open Access
• [Journal Article] High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates (2015)
  • Author(s): Kenichi Miyazaki, Keisuke Shibuya, Megumi Suzuki, Hiroyuki Wado, Akihito Sawa
  • Journal Title: Journal of Applied Physics Volume: 118 Issue: 5
  • DOI: 10.1063/1.4927746
  • Peer Reviewed
• [Journal Article] Distinct substrate effect on the reversibility of the metal-insulator transitions in electrolyte-gated VO2 thin films (2015)
  • Author(s): M. Nakano, D. Okuyama, K. Shibuya, M. Mizumaki, H. Ohsumi, M. Yoshida, M. Takata, M. Kawasaki, Y. Tokura, T. Arima, Y. Iwasa
  • Journal Title: Advanced Electronic Materials Volume: 1 Issue: 7 Pages: 1500093-1500093
  • DOI: 10.1002/aelm.201500093
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] X-ray study of metal-insulator transitions induced by W-doping and photoirradiation in VO2 films (2015)
  • Author(s): D. Okuyama, K. Shibuya, R. Kumai, T. Suzuki, Y. Yamasaki, H. Nakao,Y. Murakami, M. Kawasaki, Y. Taguchi, Y. Tokura, T. Arima
  • Journal Title: Physical Review B Volume: 91 Issue: 6 Pages: 064101-064101
  • DOI: 10.1103/physrevb.91.064101
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Epitaxial growth and structural transition of VO2/MgF2 (001) (2014)
  • Author(s): Keisuke Shibuya and Akihito Sawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 5S1 Pages: 05FF03-05FF03
  • DOI: 10.7567/jjap.53.05ff03
  • NAID: 210000143832
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Correlation between thermal hysteresis width and broadening of metal-insulator transition in Cr and Nb doped VO2 film (2014)
  • Author(s): Kenichi Miyazaki, Keisuke Shibuya, Megumi Suzuki, Hiroyuki Wado, and Akihito Sawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 7 Pages: 071102-071102
  • DOI: 10.7567/jjap.53.071102
  • NAID: 210000144156
  • Peer Reviewed
• [Journal Article] Gate-tunable gigantic lattice deformation in VO2 (2014)
  • Author(s): M. Nakano, S. Takeshita, H. Ohsumi, S. Tardif, K. Shibuya, T. Hatano, H. Yumoto, T. Koyama, H. Ohashi, M. Takata, M. Kawasaki, T. Arima, Y. Tokura, and Y. Iwasa
  • Journal Title: Appl. Phys. Lett. 104 Volume: 104 Issue: 2
  • DOI: 10.1063/1.4861901
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates (2013)
  • Author(s): Keisuke Shibuya, Jun’ya Tsutsumi, Tatsuo Hasegawa, Akihito Sawa
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 2
  • DOI: 10.1063/1.4813442
  • Peer Reviewed
• [Journal Article] Infrared-sensitive electrochromic device based on VO2 (2013)
  • Author(s): M. Nakano, K. Shibuya, N. Ogawa, T. Hatano, M. Kawasaki, Y. Iwasa, and Y. Tokura
  • Journal Title: Appl. Phys. Lett. Volume: 103 Issue: 15
  • DOI: 10.1063/1.4824621
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Electronic Phase Modulation of VO2 with Electrolyte Gating (2015)
  • Author(s): Keisuke Shibuya
  • Organizer: IUMRS-ICAM 2015
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2015-10-25
  • Int'l Joint Research
• [Presentation] Electronic phase control in vanadium dioxide thin films (2014)
  • Author(s): Keisuke Shibuya
  • Organizer: Energy Materials Nanotechnology Open Access Week 2014
  • Place of Presentation: 成都（中国）
  • Year and Date: 2014-09-22 – 2014-09-25
  • Invited
• [Presentation] 単元素ドープVO2薄膜における抵抗変化係数と抵抗率の温度履歴の相関 (2014)
  • Author(s): 宮崎 憲一、渋谷 圭介、鈴木愛美、岩城隆雄、和戸弘幸、澤 彰仁
  • Organizer: 応用物理学会秋季学術講演会
  • Place of Presentation: 札幌
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 元素ドープVO2薄膜の金属－絶縁体転移 (2014)
  • Author(s): 澤 彰仁、渋谷 圭介、宮崎 憲一、鈴木愛美、岩城 隆雄、和戸弘幸
  • Organizer: 科研費基盤S研究会「多自由度放射光Ｘ線二色性分光による 強相関系界面新規電子相の研究」
  • Place of Presentation: 熱海
  • Year and Date: 2014-07-13 – 2014-07-14
  • Invited
• [Presentation] Correlation between thermal hysteresis width and temperature coefficient of resistance in doped VO2 films for bolometer applications (2014)
  • Author(s): 宮崎 憲一、渋谷 圭介、鈴木愛美、和戸弘幸、澤 彰仁
  • Organizer: IUMRS-ICEM 2014
  • Place of Presentation: 台北（台湾）
  • Year and Date: 2014-06-10 – 2014-06-14
• [Presentation] Strain control for the metal-insulator transition temperature of VO2 thin films (2014)
  • Author(s): Keisuke Shibuya and Akihito Sawa
  • Organizer: 2014 Material Research Society Spring Meeting
  • Place of Presentation: サンフランシスコ（アメリカ）
  • Year and Date: 2014-04-21 – 2014-04-25
• [Presentation] MgF2基板上に作製したエピタキシャルVO2薄膜の金属-絶縁体転移 (2014)
  • Author(s): 渋谷 圭介、澤 彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 青山学院大学（相模原）
• [Presentation] Carrier doping and external field control of phase transition in epitaxial VO2 thin films (2013)
  • Author(s): Keisuke Shibuya
  • Organizer: Korean Physical Society 2013 Spring Meeting
  • Place of Presentation: Daejoen（韓国）
  • Invited
• [Presentation] Impact of epitaxial strain on the metal-insulator transitions in VO2 thin films on MgF2 substrates (2013)
  • Author(s): Keisuke Shibuya, Akihito Sawa
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学（京都）
• [Presentation] Metal-Insulator Transitions in VO2 Epitaxial Thin Films on MgF2 Substrates (2013)
  • Author(s): Keisuke Shibuya, Akihito Sawa
  • Organizer: Workshop on Oxide Electronics 20
  • Place of Presentation: National University of Singapore（シンガポール）
• [Patent(Industrial Property Rights)] 温度センサ (2013)
  • Inventor(s): 渋谷圭介、澤彰仁、富岡泰秀、宮崎憲一、和戸弘幸、鈴木愛美
  • Industrial Property Rights Holder: 渋谷圭介、澤彰仁、富岡泰秀、宮崎憲一、和戸弘幸、鈴木愛美
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-201759
  • Filing Date: 2013-09-27