| Project/Area Number |
25790058
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagoya University |
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Principal Investigator |
OHTA AKIO 名古屋大学, 工学(系)研究科(研究院), 研究員 (10553620)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 抵抗変化型メモリ / メモリデバイス / 絶縁膜技術 / 金属ナノドット / Si酸化膜 / 原子間力顕微鏡 / シリコン酸化膜 / 走査プローブ顕微鏡 |
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| Outline of Final Research Achievements |
Local switching properties for ReRAM with Si-rich oxide (SiOx) thin films and control of formation and disruption of conductive path due to the resistance switching were studied. Electrically isolated Ni-nanodots (NDs) with an average area of 190 nm2 as nanoscale top electrodes were formed on SiOx/Ni bottom electrode by exposing a Ni layer to remote H2-plasma without external heating. From the local I-V measurements by contacting a single Ni-ND with a Rh coated Si cantilever, a distinct uni-polar type resistance-switching behavior was observed repeatedly. Ni/SiOx/Ni MIM diodes show good size scalability of resistive switching properties. Impacts of the embedding of high density NDs and thin films on the resistive-switching properties of SiOx were also investigated. The embedding of NDs in SiOx was effective to increase the ON/OFF ratio in resistance and to reduce the variations in both SET and RESET voltages.
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