| Project/Area Number |
25790066
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Optical engineering, Photon science
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| Research Institution | National Institute of Advanced Industrial Science and Technology (2014)
Nara Institute of Science and Technology (2013) |
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Principal Investigator |
IKEDA Kazuhiro 独立行政法人産業技術総合研究所, ネットワークフォトニクス研究センター, 研究チーム長 (70541738)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2014: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | スピン光デバイス / スピン注入 / スピン拡散 / 垂直磁化 / 応用光学・量子光工学 / スピンエレクトロニクス |
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| Outline of Final Research Achievements |
In this project, we have investigated three essential technologies for realization of spin-transfer-torque switching by photocurrent. Firstly, we optimized deposition conditions for perpendicularly magnetized FeTb thin films on GaAs(110), and successfully obtained an FeTb thin film with a perpendicular remanence of 109 emu/cm3 mainly by increasing the deposition rate. We next demonstrated an injected electron spin polarization of 9.3% from Fe/AlOx injector into GaAs(110) QWs at room temperature and a high current density, which means that spin conduction between ferromagnetic material and semiconcutor is possible. Finally, using a time-resolved microscopic photoluminescence technique, we developed a method to identify the electron spin diffusion coefficient in an active region in spin-optoelectronic devices.
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