Novel surface superstructure accompanied by charge transfer studied by high-brightness reflection high-energy positron diffraction
| Project/Area Number |
25800182
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
FUKAYA Yuki 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 先端基礎研究センター, 研究副主幹 (40370465)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 表面構造 / 陽電子 / 回折 / 表面・界面物性 / 陽電子回折 |
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| Outline of Final Research Achievements |
We have investigated atomic configurations and charge transfer for the surface structures of Cs and Sn adsorbed on highly B-doped Si(111) surface by using high-brightness reflection high-energy positron diffraction. The Cs adatoms for the Cs/Si(111)-2√3×2√3-B surface have the same height, accompanied by a large amount of the charge transfer from the Cs to the substrate. For the Sn/Si(111)-2√3×2√3-B surface, the Sn adatoms have more than two different heights and the amount of the charge transfer is small as compared with the Cs/Si(111)-2√3×2√3-B case. The atomic configurations for the Sn/Si(111)-2√3×2√3-B surface gradually change with decreasing the concentration of the B atoms. We found that the atomic configurations of surface superstructure are affected by the charge transfer between the adatoms and the substrate.
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Report
(4 results)
Research Products
(59 results)
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[Journal Article] New experiment stations at KEK Slow Positron Facility2013
Author(s)
K. Wada, T. Hyodo, T. Kosuge, Y. Saito, M. Ikeda, S. Ohsawa, T. Shidara, K. Michishio, T. Tachibana, H. Terabe, R. H. Suzuki, Y. Nagashima, Y. Fukaya, M. Maekawa, I. Mochizuki, and A. Kawasuso
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Journal Title
J. Phys.: Conf. Ser.
Volume: 443
Pages: 12082-12082
DOI
Related Report
Peer Reviewed
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