| Project/Area Number |
25800182
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Condensed matter physics I
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
FUKAYA Yuki 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 先端基礎研究センター, 研究副主幹 (40370465)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 表面構造 / 陽電子 / 回折 / 表面・界面物性 / 陽電子回折 |
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| Outline of Final Research Achievements |
We have investigated atomic configurations and charge transfer for the surface structures of Cs and Sn adsorbed on highly B-doped Si(111) surface by using high-brightness reflection high-energy positron diffraction. The Cs adatoms for the Cs/Si(111)-2√3×2√3-B surface have the same height, accompanied by a large amount of the charge transfer from the Cs to the substrate. For the Sn/Si(111)-2√3×2√3-B surface, the Sn adatoms have more than two different heights and the amount of the charge transfer is small as compared with the Cs/Si(111)-2√3×2√3-B case. The atomic configurations for the Sn/Si(111)-2√3×2√3-B surface gradually change with decreasing the concentration of the B atoms. We found that the atomic configurations of surface superstructure are affected by the charge transfer between the adatoms and the substrate.
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