Electronic and magnetic property tuning of ZrCuSiAs-type compounds via hydrogen-substituion
| Project/Area Number |
25810035
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic chemistry
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Matsuishi Satoru 東京工業大学, 元素戦略研究センター, 准教授 (30452006)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Keywords | 水素アニオン / 層状化合物 / 電子ドーピング / 金属・絶縁体転移 / 混合アニオン化合物 / 金属絶縁体転移 / 固体化学 / 水素陰イオン |
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| Outline of Final Research Achievements |
The effect of electron doping on ZrCuSiAs-type LaZnAsO via hydride ion substitution to oxygen site was investigated. The substitution limit of hydrogen was determined to be < 25% and the insulator to metal transition was observed at the nominal hydrogen content between 20% to 25%. By applying the hydrogen-manganese co-substitution to LaZnAsO, the weak ferromagnetism was observed. The detailed magnetic measurement, the photoelectron emission spectroscopy and the density functional theory calculation for LaMnAsO1-xHx system indicated that the antiferromagnetic insulator to ferromagnetic metal transition via hydrogen-substitution is induced by direct interaction among Mn 3d electrons forming conduction band.
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Report
(5 results)
Research Products
(2 results)
