Fabrication of high-quality substrates for nitride-semiconductor-based solar cells
| Project/Area Number |
25820120
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 窒化物半導体 / 薄膜成長 / 電子・電気材料 |
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| Outline of Final Research Achievements |
We have fabricated novel substrates for high-performance nitride semiconductor solar cells. The substrates were fabricated via peeling off the high-quality nitride films epitaxially grown on lattice-matched oxide substrates. This process has enabled the fabrication of nitride semiconductor templates with arbitrary lattice constants and band-gaps.
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Report
(3 results)
Research Products
(14 results)
