Fabrication of high-quality substrates for nitride-semiconductor-based solar cells

• Project/Area Number: 25820120
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: KOBAYASHI Atsushi 東京大学, 生産技術研究所, 特任助教 (20470114)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 窒化物半導体 / 薄膜成長 / 電子・電気材料

Outline of Final Research Achievements

We have fabricated novel substrates for high-performance nitride semiconductor solar cells. The substrates were fabricated via peeling off the high-quality nitride films epitaxially grown on lattice-matched oxide substrates. This process has enabled the fabrication of nitride semiconductor templates with arbitrary lattice constants and band-gaps.

Research Products

• [Journal Article] Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering (2014)
  • Author(s): J. W. Shon, J. Ohta, K. Ueno, A. Kobayashi, and H. Fujioka
  • Journal Title: Applied Physics Express Volume: 7 Issue: 8 Pages: 085502-085502
  • DOI: 10.7567/apex.7.085502
  • NAID: 210000137197
  • Peer Reviewed
• [Journal Article] Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering (2014)
  • Author(s): J. W. Shon, J. Ohta, K. Ueno, A. Kobayashi, and H. Fujioka
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 5325-5325
  • DOI: 10.1038/srep05325
  • Peer Reviewed / Open Access
• [Journal Article] AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering (2014)
  • Author(s): T. Watanabe, J. Ohta, T. Kondo, M. Ohashi, K. Ueno, A. Kobayashi, and H. Fujioka
  • Journal Title: Applied Physics Letters Volume: 104 Issue: 18 Pages: 182111-182111
  • DOI: 10.1063/1.4876449
  • Peer Reviewed
• [Journal Article] Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates (2014)
  • Author(s): Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
  • Journal Title: Thin Solid Films Volume: 551 Pages: 110-113
  • DOI: 10.1016/j.tsf.2013.11.100
  • Peer Reviewed
• [Journal Article] Field-effect transistors based on cubic indium nitride (2014)
  • Author(s): M. Oseki, K. Okubo, A. Kobayashi, J. Ohta, and H. Fujioka
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 3951-3951
  • DOI: 10.1038/srep03951
  • Peer Reviewed
• [Journal Article] Solid-phase epitaxy of InOxNy alloys via thermal oxidation of InN films on yttria-stabilized zirconia (2014)
  • Author(s): A. Kobayashi, T. Itoh, J. Ohta, M. Oshima, and H. Fujioka
  • Journal Title: Physica Status Solidi RRL Volume: Early View Issue: 4 Pages: 362-366
  • DOI: 10.1002/pssr.201400007
  • Peer Reviewed
• [Journal Article] Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces (2013)
  • Author(s): J. Liu, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 17 Pages: 172101-172101
  • DOI: 10.1063/1.4826538
  • Peer Reviewed
• [Journal Article] Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO (2013)
  • Author(s): A. Kobayashi, K. Ueno, J. Ohta, M. Oshima, and H. Fujioka
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 19 Pages: 192111-192111
  • DOI: 10.1063/1.4829478
  • Peer Reviewed
• [Presentation] 酸化亜鉛基板上への窒化物半導体低温成長 (2014)
  • Author(s): 小林篤，太田実雄，藤岡洋
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学
  • Year and Date: 2014-07-26
  • Invited
• [Presentation] YSZ 基板上に成長した(InN)x(In2O3)1-x薄膜の特性
  • Author(s): 小林篤，伊藤剛輝，太田実雄，尾嶋正治，藤岡洋
  • Organizer: 第32回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖
• [Presentation] Low-temperature epitaxial growth of non/semi-polar group-III nitrides on ZnO
  • Author(s): Atsushi Kobayashi, Tomofumi Kajima, Hiroaki Tamaki, Jituso Ohta, Masaharu Oshima, and Hiroshi Fujioka
  • Organizer: 2013 JSAP-MRS Joint Symposium
  • Place of Presentation: 同志社大学
  • Invited
• [Presentation] 酸化亜鉛基板上窒化物半導体の格子歪みと偏光特性
  • Author(s): 小林篤，玉木啓晶 ，太田実雄，藤岡洋
  • Organizer: 第61回 応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
• [Remarks]
  • URL: https://sites.google.com/site/akobayashi920/
• [Remarks] http://www.iis.u-tokyo.ac.jp/~hfujioka/