Low temperature process in printed thin-film transistors toward high-resolution flexible displays

• Project/Area Number: 25820125
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: ISHIKAWA Yasuaki 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 (70581130)
• Research Collaborator: UEOKA Yoshihiro ; BERMUNDO Juan Paolo ; OSADA Yukihiro
• Project Period (FY): 2013-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2014: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 酸化物半導体 / 薄膜トランジスタ / ＩｎＺｎＯ / ＯＨラジカル / 塗布 / OHラジカル

Outline of Final Research Achievements

Flexible devices, which supports next generation ubiquitous information terminal, need high performance, printed thin-film transistors (TFTs) to activate its display. The printed InZnO thin-film transistors were developed with several post-anneal process including oxihydride-radical treatment. The wet-O2 anneal process, which was proposed in this study, served higher electrical properties with quite good yield than the TFTs with conventional anneal process. We also examined the interface layer between channel material and electrode, in printing process, and found that the printed Ag did not make interface layer, but sputtered Ag formed interface layer which will be relatively high resistive material, AgO.

Research Products

• [Journal Article] Effect of contact material on amorphous InGaZnO thin-film transistor characteristics (2014)
  • Author(s): Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
  • Journal Title: Jpn. J. Appl. Phys Volume: 53 Issue: 3S1 Pages: 03CC04-03CC04
  • DOI: 10.7567/jjap.53.03cc04
  • NAID: 210000143472
  • Peer Reviewed
• [Journal Article] Analysis of printed silver electrode on amorphous indium gallium zinc oxide (2014)
  • Author(s): Yoshihiro Ueoka, Takahiro Nishibayashi, Yasuaki Ishikawa, Haruka Yamazaki, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraoka
  • Journal Title: Jpn. J. App. Phys. Volume: 53 Issue: 4S Pages: 04EB03-04EB03
  • DOI: 10.7567/jjap.53.04eb03
  • NAID: 210000143551
  • Peer Reviewed
• [Presentation] 塗布型a-InZnO薄膜トランジスタに向けた銀ナノペーストの印刷適性 (2015)
  • Author(s): 浦川哲、石河泰明、長田至弘、藤井茉美、堀田昌宏、浦岡行治
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学、神奈川県平塚市
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] 溶液プロセスによる非晶質InZnO薄膜トランジスタ特性に対する湿式酸素アニールの影響 (2015)
  • Author(s): 長田至弘、石河泰明、藤井茉美、浦岡行治
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学、神奈川県平塚市
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] ウェットO2アニールを用いた液体材料由来の非晶質InZnO薄膜の作製とトランジスタ特性への影響 (2015)
  • Author(s): 長田至弘、石河泰明、藤井茉美、浦岡行治
  • Organizer: 応用物理学会関西支部第三回講演会
  • Place of Presentation: 奈良先端科学技術大学院大学、奈良県生駒市
  • Year and Date: 2015-02-27
• [Presentation] Effect of Wet-O2 Annealing on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors (2014)
  • Author(s): Yukihiro Osada, Yasuaki Ishikawa, Mami Fujii, and Yukiharu Uraoka
  • Organizer: The 21st International Display Workshops
  • Place of Presentation: 朱鷺メッセ新潟コンベンションセンター、新潟県新潟市
  • Year and Date: 2014-12-02 – 2014-12-05
• [Presentation] Printability of Screen Printed Silver for Oxide Thin-Film Transistor toward a Printable Device (2014)
  • Author(s): Satoshi Urakawa, Yasuaki Ishikawa, Yukihiro Osada, Mami Fujii, Masahiro Horita, and Yukiharu Uraoka
  • Organizer: The 21st International Display Workshops
  • Place of Presentation: 朱鷺メッセ新潟コンベンションセンター、新潟県新潟市
  • Year and Date: 2014-12-02 – 2014-12-05
• [Presentation] Interface Control toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors (2014)
  • Author(s): Yasuaki Ishikawa, Juan Paolo Bermund, Haruka Yamazaki, Mami Fujii, and Yukiharu Uraoka
  • Organizer: The 14th International meeting on information display
  • Place of Presentation: EXCO, Daegu, Korea
  • Invited
• [Presentation] Effect of Back Channel on the Characteristics of Solution-Derived Amorphous InZnO Thin-Film Transistors (2013)
  • Author(s): Yukihiro Osada, Yasuaki Ishikawa, Li Lu, and Yukiharu Uraoka
  • Organizer: 20th International display workshop
  • Place of Presentation: Sapporo Covention Center, Hokkaido
• [Presentation] Analysis of Printed Ag Electrode on a-InGaZnO (2013)
  • Author(s): Yoshihiro Ueoka, Takahiro Nishibayashi, Yasuaki Ishikawa, Haruka Yamazaki, Yukihiro Osada, Masahiro Horita, and Yukiharu Uraok
  • Organizer: 45th International conference of solid state devices and materials
  • Place of Presentation: Hilton Fukuoka Sea Hawk, Fukuoka
• [Presentation] Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor (2013)
  • Author(s): Yoshihiro Ueoka, Yasuaki Ishikawa, Juan Paolo Bermundo, Haruka Yamazaki, Satoshi Urakawa, Yukihiro Osada, Masahiro Horita, and Yukihiro Uraoka
  • Organizer: The 20th Internaitonal workshop on active-materix flat panel displays and devices
  • Place of Presentation: Avanti Kyoto Hall, Kyoto
• [Presentation] 溶液プロセスで作製したアモルファスInZnO薄膜トランジスタ特性に対するバックチャネルの影響 (2013)
  • Author(s): 長田至弘、石河泰明、呂莉、浦岡行治
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学、京都