| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
For development of high-performance diamond power device, I study about the dislocations in semiconducting diamond layer of Schottky barrier diode by using x-ray topography. Focused device performance is breakdown voltage characteristics. For the estimate the distribution of dislocations in the area of the each Schottky electrode, dislocations in semiconducting diamond layer were estimated by using X-ray topography. From experimental data, any killer dislocation was not found. However, if dislocations work as several type of resistors of power device, it is assumed that edge dislocation and unknown defect disturb the device performance.
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