Defect analysis in p- Diamond Layer of Diamond Power Device
Project/Area Number |
25820128
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
Kato Yukako 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (90509837)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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Keywords | ダイヤモンド / パワーデバイス / 転位 / ショットキーバリアダイオード / X線トポグラフィー / X線トポグラフィ / ラマン顕微鏡 / 複屈折顕微鏡 |
Outline of Final Research Achievements |
For development of high-performance diamond power device, I study about the dislocations in semiconducting diamond layer of Schottky barrier diode by using x-ray topography. Focused device performance is breakdown voltage characteristics. For the estimate the distribution of dislocations in the area of the each Schottky electrode, dislocations in semiconducting diamond layer were estimated by using X-ray topography. From experimental data, any killer dislocation was not found. However, if dislocations work as several type of resistors of power device, it is assumed that edge dislocation and unknown defect disturb the device performance.
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Report
(4 results)
Research Products
(17 results)
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[Presentation] Diamond based power device
Author(s)
鹿田真一、梅澤仁、加藤有香子、山田英明、坪内信輝、杢野由明、茶谷原昭義、舟木剛
Organizer
The International Conference on Silicon Carbide and Related Materials
Place of Presentation
Phoenix Seagaia Resort(Miyazaki)
Related Report
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