| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
|
|---|
| Outline of Final Research Achievements |
The origin of a statistical distribution of random telegraph noise (RTN, noise induced by single-electron behavior) amplitude in scaled NAND flash memory technology is investigated through 3D device simulation for error-resistive NAND flash memory system. Although random dopant fluctuation was believed to be the major physical origin as reported in the previous works, it is newly found that many other physical origins, such as the number of traps and the amount of charge in the floating gate of the NAND flash memory cell, are important factors to understand RTN amplitude distribution.
|
