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A fundamental study for a scaled NAND flash memory system resistive to errors induced by single-electron phenomenon

Research Project

Project/Area Number 25820148
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionShinshu University

Principal Investigator

MIYAJI Kousuke  信州大学, 学術研究院工学系, 准教授 (80635467)

Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
KeywordsNANDフラッシュメモリ / ランダムテレグラフノイズ / デバイスシミュレーション / 離散不純物ばらつき / 酸化膜トラップ / 離散不純物分布
Outline of Final Research Achievements

The origin of a statistical distribution of random telegraph noise (RTN, noise induced by single-electron behavior) amplitude in scaled NAND flash memory technology is investigated through 3D device simulation for error-resistive NAND flash memory system. Although random dopant fluctuation was believed to be the major physical origin as reported in the previous works, it is newly found that many other physical origins, such as the number of traps and the amount of charge in the floating gate of the NAND flash memory cell, are important factors to understand RTN amplitude distribution.

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • 2013 Research-status Report
  • Research Products

    (10 results)

All 2016 2015 2014 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results,  Acknowledgement Compliant: 2 results) Presentation (5 results) (of which Int'l Joint Research: 1 results) Remarks (3 results)

  • [Journal Article] Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory2016

    • Author(s)
      Toshihiro Tomita, Kousuke Miyaji
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 4S Pages: 04EE08-04EE08

    • DOI

      10.7567/jjap.55.04ee08

    • NAID

      120007100488

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30nm NAND flash memory2015

    • Author(s)
      Toshihiro Tomita and Kousuke Miyaji
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DD02-04DD02

    • DOI

      10.7567/jjap.54.04dd02

    • NAID

      120007100489

    • Related Report
      2014 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] 3次元デバイスシミュレーションを用いた30 nm世代NANDフラッシュメモリにおけるRTN統計分布の浮遊ゲート内電荷量及びトラップ個数依存性解析2015

    • Author(s)
      富田季宏、宮地幸祐
    • Organizer
      平成27年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      長野市信州大学工学部
    • Year and Date
      2015-12-12
    • Related Report
      2015 Annual Research Report
  • [Presentation] Effects of Cell Vth State and Number of Traps on Statistical Distribution of Random Telegraph Noise in Scaled NAND Flash Memory2015

    • Author(s)
      Toshihiro Tomita, Kousuke Miyaji
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) 2015
    • Place of Presentation
      Sapporo Convention Center
    • Year and Date
      2015-09-27
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 30nm世代NANDフラッシュメモリにおけるRTNの空間及び統計分布のチャネル不純物濃度依存性2015

    • Author(s)
      富田季宏、宮地幸祐
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 湘南キャンパス (神奈川県)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Research-status Report
  • [Presentation] Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory2014

    • Author(s)
      Toshihiro Tomita and Kousuke Miyaji
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center (茨城県)
    • Year and Date
      2014-09-08 – 2014-09-11
    • Related Report
      2014 Research-status Report
  • [Presentation] 30nm世代NANDフラッシュメモリにおける ランダムテレグラフノイズの強度と分布のチャネル不純物密度依存性2014

    • Author(s)
      富田季宏、宮地幸祐
    • Organizer
      ICD若手研究会2014
    • Place of Presentation
      京都大学時計台記念館
    • Related Report
      2013 Research-status Report
  • [Remarks] 宮地研究室ウェブサイト業績リスト

    • URL

      http://www.shinshu-u.ac.jp/faculty/engineering/chair/elec024/ronnbunn_2015.html

    • Related Report
      2015 Annual Research Report
  • [Remarks] 信州大学学術情報オンラインシステムSOAR研究者総覧【宮地幸祐】

    • URL

      http://soar-rd.shinshu-u.ac.jp/profile/ja.yenpWFLa.html

    • Related Report
      2015 Annual Research Report 2014 Research-status Report
  • [Remarks] 宮地研究室ウェブサイト業績リスト

    • URL

      http://www.shinshu-u.ac.jp/faculty/engineering/chair/elec024/ronnbunn_2014.html

    • Related Report
      2014 Research-status Report

URL: 

Published: 2014-07-25   Modified: 2019-07-29  

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