| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
|---|
| Outline of Final Research Achievements |
b-Ga2O3 growth condition is studied using analysis of element compositions and crystalline qualities to the purpose of device fabrication of gallium oxide. From the X-ray diffraction analysis, crystalline orientation of the gallium oxide film which is thicker than a thin film is good. Optical transparent wavelength range of the gallium oxide compared with the other transparent conductive oxide materials (TIO, ZnO). It could be able to confirm that the transparent wavelength range of gallium oxide was much wider than other materials. In addition to that, long time thermal treatment up to 40 hours at 900oC is effective to increase electrical conductance.
|
