• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Fabrication of thin film flexible transistor using gallium oxide

Research Project

Project/Area Number 25820149
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionNational Institute of Technology, Kumamoto College

Principal Investigator

Takakura Kenichiro  熊本高等専門学校, 情報通信エレクトロニクス工学科, 准教授 (70353349)

Project Period (FY) 2013-04-01 – 2016-03-31
Project Status Completed (Fiscal Year 2015)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2015: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywords酸化物半導体 / フレキシブルデバイス / 酸化ガリウム / 透明導電膜
Outline of Final Research Achievements

b-Ga2O3 growth condition is studied using analysis of element compositions and crystalline qualities to the purpose of device fabrication of gallium oxide. From the X-ray diffraction analysis, crystalline orientation of the gallium oxide film which is thicker than a thin film is good. Optical transparent wavelength range of the gallium oxide compared with the other transparent conductive oxide materials (TIO, ZnO). It could be able to confirm that the transparent wavelength range of gallium oxide was much wider than other materials. In addition to that, long time thermal treatment up to 40 hours at 900oC is effective to increase electrical conductance.

Report

(4 results)
  • 2015 Annual Research Report   Final Research Report ( PDF )
  • 2014 Research-status Report
  • 2013 Research-status Report
  • Research Products

    (7 results)

All 2015 2013

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (6 results) (of which Int'l Joint Research: 1 results)

  • [Journal Article] Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering2013

    • Author(s)
      K. Ishibashi, R. Aida, M. Takahara, J. Kudou, I. Tsunoda, K. Takakura, T. Nakashima, M. Shibuya, K. Murakami
    • Journal Title

      Phys. Status Solidi

      Volume: C10 Pages: 1588-1591

    • Related Report
      2013 Research-status Report
    • Peer Reviewed
  • [Presentation] Crystalline quality evaluation of b-Ga2O3/Al2O3 grown by thermal annealing2015

    • Author(s)
      H. Ishimoto, H. Ogata, S. Koba, I. Tsunoda, K. Takakura
    • Organizer
      7th Semiconductor Materials and Devices Forum
    • Place of Presentation
      熊本
    • Year and Date
      2015-11-14
    • Related Report
      2015 Annual Research Report
  • [Presentation] Investigation of crystal orientation of -Ga2O3 thin film grown on sapphire substrate by room temperature deposition and subsequent annealing2015

    • Author(s)
      H. Ishimoto, H. Ogata, S. Koba, I. Tsunoda, and K. Takakura
    • Organizer
      International Conference on Gallium Oxide and related materials 2015
    • Place of Presentation
      Kyoto
    • Year and Date
      2015-11-04
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Evaluation of crystal structure and optical properties of β-Ga2O3 as-deposited and after annealed.2015

    • Author(s)
      H. Ishimoto, K. Ishibashi, R. Aida, I. Tsunoda, K. Takakura, K. Murakami
    • Organizer
      33th Electronic Materials Symposium
    • Place of Presentation
      Sizuoka
    • Year and Date
      2015-07-15 – 2015-07-17
    • Related Report
      2014 Research-status Report
  • [Presentation] Investigation of relationships between film thickness and optical absorption coefficient of β-Ga2O3 film2015

    • Author(s)
      M. Izawa, H. Ishimoto, T. Goto, R. Aida, K. Ishibashi, I. Tsunoda, K. Takakura, K. Murakami
    • Organizer
      33th Electronic Materials Symposium
    • Place of Presentation
      Shizuoka
    • Year and Date
      2015-07-15 – 2015-07-17
    • Related Report
      2014 Research-status Report
  • [Presentation] Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering2013

    • Author(s)
      K. Ishibashi, R. Aida, M. Takahara, J. Kudou, I. Tsunoda, K. Takakura, T. Nakashima, M. Shibuya, K. Murakami
    • Organizer
      The 40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2013 Research-status Report
  • [Presentation] Investigation of relationships between physical optoelectrical property properties and void grains in RF magnetron sputtered b-Ga2O3 thin films2013

    • Author(s)
      R. Aida, K. Ishibashi, M. Takahara, J. Kudou, I. Tsunoda, K. Takakura
    • Organizer
      27th International Conference on Defects in Semiconductors
    • Place of Presentation
      Italy
    • Related Report
      2013 Research-status Report

URL: 

Published: 2014-07-25   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi