Measurements of mechanical properties of group III-nitride films by in situ transmission electron microscope nanoindentation

• Project/Area Number: 25820320
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Physical properties of metals/Metal-base materials
• Research Institution: The University of Tokyo
• Principal Investigator: Tokumoto Yuki 東京大学, 生産技術研究所, 講師 (20546866)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 転位 / 窒化物半導体薄膜 / 超微小硬さ試験 / ひずみ

Outline of Final Research Achievements

In order to accurately evaluate mechanical properties of group III-nitride thin films, nanoindentaion was performed. Then, in situ transmission electron microscope nanoindentation was performed to elucidate dislocation generation and propagation processes in group III-nitride thin films. By combining ex situ and in situ nanoindentation, the relationship between macroscopic mechanical properties and nanoscopic dislocation dynamics was revealed.

Research Products

• [Journal Article] Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides (2015)
  • Author(s): I. Yonenaga, Y. Ohkubo, M. Deura, K. Kutsukake, Y. Tokumoto, Y. Ohno, A. Yoshikawa, and X. Q. Wang
  • Journal Title: AIP Advances Volume: 5 Issue: 7
  • DOI: 10.1063/1.4926966
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Presentation] Correlation between crystal quality and mechanical properties of InN (2015)
  • Author(s): M. Deura, Y. Ohkubo, Y. Tokumoto, K. Kutsukake, Y. Ohno and I. Yonenaga
  • Organizer: The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Act City Hamamatsu (Hamamatsu, Shizuoka)
  • Year and Date: 2015-11-11
  • Int'l Joint Research
• [Presentation] InNの結晶特性と硬度・ヤング率の相関 (2015)
  • Author(s): 出浦桃子，大久保泰，徳本有紀, 沓掛健太朗, 大野裕, 米永一郎
  • Organizer: 第7回窒化物半導体結晶成長講演会
  • Place of Presentation: 東北大学（宮城県仙台市）
  • Year and Date: 2015-05-07
• [Presentation] 窒化インジウム薄膜の硬度・ヤング率と結晶特性の関係 (2015)
  • Author(s): 大久保泰，徳本有紀，出浦桃子，後藤頼良，沓掛健太朗，大野裕，米永一郎
  • Organizer: 日本物理学会第70回年次大会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2015-03-21
• [Presentation] 窒化物半導体中の転位・構造欠陥の動特性と制御に関する基礎研究 (2015)
  • Author(s): 徳本有紀
  • Organizer: 日本物理学会第70回年次大会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2015-03-21
  • Invited
• [Presentation] InNの硬度とヤング率の評価 (2014)
  • Author(s): 大久保泰，出浦桃子，徳本有紀，沓掛健太朗，大野裕，米永一郎
  • Organizer: 電子情報通信学会研究会(窒化物半導体光・電子デバイス、材料、関連技術、及び一般)
  • Place of Presentation: 大阪大学
  • Year and Date: 2014-11-27
• [Presentation] ナノインデンテーション法によるInNの硬度とヤング率の評価 (2014)
  • Author(s): 大久保泰，徳本有紀，出浦桃子，後藤頼良，沓掛健太朗，大野裕，米永一郎
  • Organizer: 日本物理学会2014年秋季大会
  • Place of Presentation: 中部大学
  • Year and Date: 2014-09-20
• [Presentation] In situ observation of dislocation dynamics in AlN films
  • Author(s): Y. Tokumoto, K. Kutsukake, Y. Ohno and I. Yonenaga
  • Organizer: Electron Microscopy & Multiscale Modeling (EMMM) 2013
  • Place of Presentation: Kyoto
• [Presentation] AlN薄膜への転位導入と伝搬挙動の観察
  • Author(s): 徳本有紀, 沓掛 健太朗, 大野裕, 米永一郎
  • Organizer: 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学
  • Invited
• [Presentation] AlxGa1-xN薄膜の混晶硬化と秩序構造との相関
  • Author(s): 徳本有紀, 種市寛人, 沓掛 健太朗, 大野裕, 三宅秀人, 米永一郎
  • Organizer: 日本物理学会2013年秋季大会
  • Place of Presentation: 徳島大学
• [Presentation] AlxGa1-xN混晶薄膜の機械的特性
  • Author(s): 徳本有紀
  • Organizer: 第153回超塑性研究会
  • Place of Presentation: 東京大学