Electrodeposition of copper on silicon studied with in-situ X-ray scattering

• Project/Area Number: 25820373
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Material processing/Microstructural control engineering
• Research Institution: Tokyo Gakugei University
• Principal Investigator: Voegeli Wolfgang 東京学芸大学, 教育学部, 助教 (90624924)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: X線反射率 / シリコン / 薄膜成長 / Electrodeposition / X-ray reflectivity / Silicon / 表面・界面物性 / Copper

Outline of Final Research Achievements

Time-resolved in-situ X-ray reflectivity was used to investigate structural changes during the electrochemical growth of thin films and related phenomena. For the experiments, the simultaneous multiple-angle dispersive X-ray scattering method was used, which can measure the whole reflectivity curve at once with a time resolution of seconds.
In particular, the electrodeposition of copper thin films onto silicon, the anodic oxidation of silicon to grow thin silicon dioxide films, and the structure of the electric double layer of an ionic liquid were investigated. For the oxidation of silicon, it was found that relaxations of the film during growth are important for its final structure. The investigation of the electric double layer formation showed that slow relaxations not associated with current flow occur.

Research Products

• [Journal Article] Dynamical Response of the Electric Double Layer Structure of the DEME-TFSI Ionic Liquid to Potential Changes Observed by Time-Resolved X-ray Reflectivity (2016)
  • Author(s): W. Voegeli, E. Arakawa, T. Matsushita, O. Sakata, Y. Wakabayashi
  • Journal Title: Zeitschrift fuer Physikalische Chemie Volume: 230 Issue: 4 Pages: 577-585
  • DOI: 10.1515/zpch-2015-0669
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Anodic Oxidation of Silicon Observed In-Situ by Specular X-ray Reflectivity (2015)
  • Author(s): Wolfgang Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa and T. Matsushita
  • Organizer: ALC '15, 10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15
  • Place of Presentation: Kunibiki Messe (Matsue, Japan)
  • Year and Date: 2015-10-25
  • Int'l Joint Research
• [Presentation] Observation of irreversible structural changes of surfaces and thin films with time-resolved X-ray reflectivity and diffraction (2015)
  • Author(s): Wolfgang Voegeli, Etsuo Arakawa, Tetsuroh Shirasawa, Toshio Takahashi, Yohko F. Yano, Tadashi Matsushita
  • Organizer: 588. WE-Heraeus-Seminar on 'Element Specific Structure Determination in Materials on Nanometer and Sub-Nanometer'
  • Place of Presentation: Conference Centre of the German Physical Society (ドイツ・Bad Honnef)
  • Year and Date: 2015-04-26
  • Int'l Joint Research
• [Presentation] A method for quick measurement of the surface X-ray diffraction profile (2015)
  • Author(s): Voegeli Wolfgang、白澤徹郎、荒川悦雄、亀沢知夏、岩見隆太郎、松下正
  • Organizer: 日本物理学会第70回年次大会
  • Place of Presentation: 早稲田大学 早稲田キャンパス
  • Year and Date: 2015-03-24
• [Presentation] Observation of oxide growth during anodic oxidation of silicon by time-resolved X-ray reflectivity (2015)
  • Author(s): W. Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa, T. Matsushita
  • Organizer: 日本放射光学会年会
  • Place of Presentation: 立命館大学びわこ･くさつキャンパス
  • Year and Date: 2015-01-11
• [Presentation] In-situ X-ray reflectivity observation of oxide growth during anodic oxidation of Si (2014)
  • Author(s): W. Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa, T. Matsushita
  • Organizer: The 7th International Symposium on Surface Science
  • Place of Presentation: 島根県立産業交流会館（くにびきメッセ）
  • Year and Date: 2014-11-03
• [Presentation] その場X線反射率測定による薄膜成長の観察 (2014)
  • Author(s): Voegeli Wolfgang、荒川悦雄、亀沢知夏、岩見隆太郎、白澤徹郎、松下正
  • Organizer: 2014年電気化学秋季大会
  • Place of Presentation: 北海道大学高等教育推進機構
  • Year and Date: 2014-09-27
• [Presentation] X線反射率による電気化学的薄膜成長のその場観察 (2014)
  • Author(s): Voegeli Wolfgang、荒川悦雄、亀沢知夏、岩見隆太郎、白澤徹郎、松下正
  • Organizer: 日本物理学会２０１４年秋季大会
  • Place of Presentation: 中部大学春日井キャンパス
  • Year and Date: 2014-09-07
• [Presentation] Electrochemical thin-film growth investigated by time-resolved X-ray reflectivity (2014)
  • Author(s): W. Voegeli, E. Arakawa, C. Kamezawa, R. Iwami, T. Shirasawa, T. Matsushita
  • Organizer: The 13th Surface X-ray and Neutron Scattering conference
  • Place of Presentation: ドイツ・ハンブルク
  • Year and Date: 2014-09-07
• [Presentation] Ｘ線反射率曲線の時分割測定法の開発と応用
  • Author(s): 松下 正, 荒川悦雄, Wolfgang Voegeli, 岩見 隆太郎, 亀沢 知夏, 矢野 陽子, 西 直哉, 池田 陽一
  • Organizer: 物構研サイエンスフェスタ２０１３
  • Place of Presentation: つくば・つくば国際会議場