| Project/Area Number |
25820373
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Material processing/Microstructural control engineering
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| Research Institution | Tokyo Gakugei University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2014: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | X線反射率 / シリコン / 薄膜成長 / Electrodeposition / X-ray reflectivity / Silicon / 表面・界面物性 / Copper |
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| Outline of Final Research Achievements |
Time-resolved in-situ X-ray reflectivity was used to investigate structural changes during the electrochemical growth of thin films and related phenomena. For the experiments, the simultaneous multiple-angle dispersive X-ray scattering method was used, which can measure the whole reflectivity curve at once with a time resolution of seconds.
In particular, the electrodeposition of copper thin films onto silicon, the anodic oxidation of silicon to grow thin silicon dioxide films, and the structure of the electric double layer of an ionic liquid were investigated. For the oxidation of silicon, it was found that relaxations of the film during growth are important for its final structure. The investigation of the electric double layer formation showed that slow relaxations not associated with current flow occur.
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