Synthesis of Si based high performance thermoelectric material by fabricating all-scale phonon scattering structure
| Project/Area Number |
25820457
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Energy engineering
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| Research Institution | Osaka University |
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Principal Investigator |
OHISHI Yuji 大阪大学, 工学(系)研究科(研究院), 助教 (20571558)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | ナノSi / 熱電特性 / 熱電 / ボールミル / コンポジット / ナノ結晶シリコン / 環境調和型熱電材料 / 低熱伝導率 |
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| Outline of Final Research Achievements |
The thermoelectric properties of heavily doped n-type and p-type single crystal Si were studied. A theoretical model based on the Boltzmann transport equation was developed from the experimentally observed data. A bulk nanocrystalline Si was synthesized by ball milling and spark plasma sintering. TEM observation showed that the grain size was around 50 nm. The thermal conductivity was reduced compared to that of the single crystal Si due to the enhanced phonon scattering at grain boundaries. Further reduction of the thermal conductivity was achieved by adding NiSi2 nanoparticles and Ge impurities. However, the thermoelectric performance was not improved compared to that of Si-Ge alloys. This result suggests that optimization of the sizes of the grains and nanoparticles are necessary to reduce the thermal conductivity significantly and enhance the thermoelectric performance.
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Report
(3 results)
Research Products
(5 results)
