Study of mechanism of ferromagnetism in diluted magnetic semiconductor and fabrication of magnetic structure in nanoscale by STM
| Project/Area Number |
25870103
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanostructural physics
Applied materials
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| Research Institution | University of Tsukuba |
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Principal Investigator |
Kanazawa Ken 筑波大学, 数理物質系, 助教 (60455920)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2013: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 磁性半導体 / スピントロニクス / 走査トンネル顕微鏡 / 表面・界面物性 / 分子線エピタキシー法 |
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| Outline of Final Research Achievements |
In this study, we performed STM study on Cr atoms doped in II-VI semiconductor ZnTe, in order to clarify the origin of the ferromagnetic character of the diluted magnetic semiconductor, which is expected as one of the promising materials for application to spintronics devices. As results of our STM study, ｗe successfully observed single Cr atoms substituting into Zn sites. And our STS measurements revealed Cr-induced spin-polarized impurity states in the energy gap region of the host ZnTe. Furthermore, we found that the impurity states of neighboring Cr atoms were broadened reflecting the ferromagnetic interaction between them.
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Report
(4 results)
Research Products
(47 results)
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[Journal Article] Depositon and characterization of amorphous alminum nitride thin films for a gate insulator2015
Author(s)
H. Oikawa, R. Akiyama, K. Kanazawa, S. Kuroda, I. Harayama, K. Nagashima, D. Sekiba, Y. Ashizawa, A. Tsukamoto, K. Nakagawa, N. Ota
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Journal Title
Thin Solid Films
Volume: 574
Pages: 110-114
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Presentation] MBE growth and magnetic properties of magnetic semiconductor (Zn,Fe)Te2013
Author(s)
S. Ishitsuka, T. Domon, R. Akiyama, K. Kanazawa, S. Kuroda, M. Mitome, Y. Bando, H. Ofuchi
Organizer
The 16th International Conference on II-VI Compound and Related Materials
Place of Presentation
Nagahama Royal Hotel, Nagahama, Japan
Related Report
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