| Project/Area Number |
25870448
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
Nanomaterials engineering
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| Research Institution | Shimane University |
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Principal Investigator |
Yoshida Toshiyuki 島根大学, 総合理工学研究科(研究院), 助教 (50335551)
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| Research Collaborator |
FUJITA Yasuhisa
SHINOHARA Kazato
ITOHARA Daiki
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | ZnOナノ粒子 / 塗布法 / p型伝導 / TFT / スプレー法 / 滴下法 / 電気伝導 / トランジスタ応用 |
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| Outline of Final Research Achievements |
The n-type and the p-type ZnO layers were successfully obtained using ZnO nano-particles (NPs) synthesized using the arc-discharge-mediated gas evaporation. And, we achieved the world’s first pn diodes and p-channel and n-channel thin film transistors (TFTs) using only ZnO NPs.
By using these techniques, it was shown that the integrated circuits (ICs) with the conventional gate logic rules can be formed on the various kinds of substrates; i.e. the various materials and/or surface morphologies. In this study, the drop casting, the spraying and the liquid-phase precipitation deposition methods were tried. These methods have a possibility to achieve the extremely low capital investment and low process cost, which can make many small and medium-sized enterprises participating in this field.
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