Development of defect-controlled hetero-junction contact with amorphous silicon insertion

• Project/Area Number: 25870466
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties; Electronic materials/Electric materials
• Research Institution: Hiroshima University
• Principal Investigator: HANAFUSA HIROAKI 広島大学, 先端物質科学研究科, 助教 (70630763)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2013: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 炭化ケイ素 / オーミックコンタクト / シリコン挿入層 / ワイドバンドギャップ半導体 / Si/SiCヘテロ接合

Outline of Final Research Achievements

Low-resistivity contact formation by band potential control with a high-impurity contained amorphous Si insertion layer was investigated for Silicon carbide (SiC) devices. Using a proposed method, effective contact property of 2x10-6Ωcm2 was achieved without annealing process of metal electrode. XPS measurement revealed that defect controlled a-Si insertion layer reduces potential energy offset. From these results, band offset alignment was controlled by proposed defect-controlled a-Si layer insertion. These results expected to increase SiC device reliability and properties.

Research Products

• [Journal Article] Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis (2015)
  • Author(s): Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi
  • Journal Title: Materials Science Forum Volume: 821-823 Pages: 391-394
  • DOI: 10.4028/www.scientific.net/msf.821-823.391
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Properties of Al Ohmic contacts to n-type 4H-SiC employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer (2014)
  • Author(s): Hiroaki Hanafusa, Akio Ohta, Ryuhei Ashihara, Keisuke Maruyama, Tsubasa Mizuno, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi
  • Journal Title: Materials Science Forum Volume: 778-780 Pages: 649-652
  • DOI: 10.4028/www.scientific.net/msf.778-780.649
  • Peer Reviewed
• [Presentation] Estimation of Phosphorus-implanted 4H-SiC Layer Activation by EBSD pattern analysis (2014)
  • Author(s): Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi
  • Organizer: 10th European Conference on Silicon Carbide and Related Materials (ECSCRM2014)
  • Place of Presentation: Grenoble, France
  • Year and Date: 2014-09-21 – 2014-09-25
• [Presentation] EBSD パターン明瞭度を用いたリン注入4H-SiC 層の結晶性評価 (2014)
  • Author(s): 花房宏明、丸山佳祐、林 将平、東清一朗
  • Organizer: 第75回 応用物理学会学術講演会
  • Place of Presentation: 北海道大学, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Si 挿入層の不純物濃度に依存した4H-SiC のコンタクト特性 (2014)
  • Author(s): 廣松志隆、花房宏明、丸山佳祐、石丸凌輔、東清一郎
  • Organizer: 2014年度 応用物理・物理系学会中国四国支部 合同学術講演会
  • Place of Presentation: 島根大学, 島根県
  • Year and Date: 2014-07-26
• [Presentation] Contact Property of 4H-SiC with Phosphorus-Doped and Crystallized Amorphous-Silicon Insertion Layer (2013)
  • Author(s): Hiroaki Hanafusa, Akio Ohta, Ryuhei Ashihara, Keisuke Maruyama, Tsubasa Mizuno, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi
  • Organizer: International Conference of Silicon Carbide and Related Materials 2013
  • Place of Presentation: Miyazaki, Japan