Hydrogen gas sensor based on ultra-thin palladium film grown on fibre-textured aluminium nitride buffer layer
| Project/Area Number |
25870772
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals/Metal-base materials
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo Institute of Technology (2015)
Tokyo University of Science (2013-2014) |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2015: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 水素 / パラジウム / 窒化アルミニウム / エピタキシャル成長 / 極薄膜 / 界面物性 / 配向性 / 格子ひずみ / ひずみ / 菱面体 / 薄膜 / ナノ材料 |
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| Outline of Final Research Achievements |
A hydrogen gas sensor based on an ultra-thin palladium film was fabricated using a fibre-textured aluminium nitride buffer layer. Since the film was prepared using the continuous sputter deposition, the local-epitaxial growth at the interface is enhanced and the film is highly (111) textured. The sensor works at room temperature and exhibits high resistance against hydrogen absorption/desorption processes. The in-situ X-ray diffraction measurement during hydrogen absorption revealed the large expansion along the film normal direction and the relatively small expansion along the in-plane direction. This selective expansion suppresses both the crystallinity degradation of the palladium lattice and the formation of palladium hydride, resulting in the enhanced sensing properties.
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Report
(4 results)
Research Products
(9 results)
