| Project/Area Number |
25870885
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
Nanostructural physics
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| Research Institution | Toyota Technological Institute |
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Principal Investigator |
OHMORI Masato 豊田工業大学, 工学(系)研究科(研究院), 研究員 (70454444)
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| Project Period (FY) |
2013-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | ナノワイヤ / ナノ細線 / 量子ドット / コラムナ量子ドット / 分子線エピタキシー / 量子ロッド / TEM / EDX |
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| Outline of Final Research Achievements |
Transport properties and structural characteristics of a single semiconductor nanowire grown by molecular beam epitaxy were investigated. The nanowires were formed by depositing an AlGaAs/GaAs/InAs short-period superlattice onto self-assembled InAs quantum dots on GaAs. It is found that the nanowire current channels showed good ohmic conduction when the compositions of Al, In and Ga were about 19, 29 and 52%, respectively. In addition, the measurements of the conductance of nanowires as a function of temperature imply Luttinger-liquid behavior. These results suggest that our nanowire has potential applications in optoelectronics devices.
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