| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2014: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
|
|---|
| Outline of Final Research Achievements |
We established the fabricating monolayer and multilayer graphene technology for basic to graphene memory. Especially the effective of hydrogen gas was important.Hydrogen gas in raising period promotes graphene nuclear growth and its in cooling period etched graphene. We fabricated graphene memory with a high performance because some defects were fromed by hydrogen gas immediately after graphene fabrication.Memory performance increased with an the number of the density of defects increased. Furthermore, electrons tended to be trapped to the defects. From the results obtained in these investigations,we revealed the memory operation and principle in graphene memory which operate by electron trap to defects.
|
