| Project/Area Number |
25871196
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
Electronic materials/Electric materials
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
Asanuma Shutaro 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 (30409635)
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| Research Collaborator |
SAWA Akihito
INOUE Isao
YAMADA Hiroyuki
SATOH Hiroshi
SIBUYA Keisuke
SHIMA Hisashi
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2014: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
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| Keywords | 強相関エレクトロニクス / 電子・電気材料 / 電子デバイス・機器 / 表面・界面物性 / 強相関電子系 / 強相関酸化物の電子相制御 |
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| Outline of Final Research Achievements |
Recently, miniaturization of electronic devices using semiconductors is advancing. However, miniaturization of these devices is approaching their limits. Therefore, the development of the new device using the materials with an unprecedented characteristic is being studied to exceed those limits. One of them is a Mott transistor applying a phenomenon called metal insulator phase transition. In this research, we fabricated Mott transistors which are made of two kinds of oxides, NdNiO3 and SmCoO3, and compared their performance.
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