Basic research of high-mobility transistor with layered MoS2 channel

• Project/Area Number: 25889022
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: WAKABAYASHI Hitoshi 東京工業大学, 総合理工学研究科(研究院), 教授 (80700153)
• Project Period (FY): 2013-08-30 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000); Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
• Keywords: 電子デバイス・集積回路 / 遷移金属ダイカルコゲナイド / 二硫化モリブデン / スパッタ / 第一原理計算 / 2次元層状半導体 / ドーピング

Outline of Final Research Achievements

A basic research of MoS2 film, which is an atomically-layered semiconductor instead of silicon, was carried out for high-performance and low-cost LSIs. In order to improve the mobility determining transistor performance, it was confirmed that the impurity concentration of MoS2 film is reduced as 1017 cm-3 by using a high-temperature sputtering method. Moreover, 1016 cm-3 and mobility of 26 cm2/V-s were achieved by using the flatting process for SiO2 underneath film.

Research Products

• [Journal Article] Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs (2015)
  • Author(s): Takumi Ohashi, Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura and Hitoshi Wakabayashi
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DN08-04DN08
  • DOI: 10.7567/jjap.54.04dn08
  • NAID: 210000145087
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Presentation] Two dimensional material device technologies (2015)
  • Author(s): H. Wakabayashi
  • Organizer: IEEE EDS Mini-Colloquium: WIMNACT 45
  • Place of Presentation: 東京工業大学
  • Year and Date: 2015-02-19
  • Invited
• [Presentation] Sputtered MoS2 Film for Future High-Performance Nanoelectronic Devices (2014)
  • Author(s): T. Ohashi, Hitoshi Wakabayashi, et. al
  • Organizer: Thailand-Japan International Academic Conference
  • Place of Presentation: 東京大学
  • Year and Date: 2014-11-22
• [Presentation] Advanced-CMOS Device Benchmarks and following Transition-Metal Dichalcogenides (TMDs) for 2D FETs (2014)
  • Author(s): H. Wakabayashi
  • Organizer: QNERC Workshop on Nano Devices and Materials
  • Place of Presentation: 東京工業大学
  • Year and Date: 2014-11-04
  • Invited
• [Presentation] Advanced Scaling and Wiring Technology (2014)
  • Author(s): H. Wakabayashi
  • Organizer: ADMETA Plus 2014
  • Place of Presentation: 東京大学
  • Year and Date: 2014-10-22
  • Invited
• [Presentation] Multi-Layered MoS2 Thin Film Formed by High- Temperature Sputtering for Enhancement-Mode nMOSFETs (2014)
  • Author(s): T. Ohashi, H. Wakabayashi, et. al.
  • Organizer: Solid State Device and Materials, 2014
  • Place of Presentation: エポカルつくば
  • Year and Date: 2014-09-11
• [Presentation] Progress and Benchmarking of CMOS-Device Technologie (2014)
  • Author(s): H. Wakabayashi
  • Organizer: International Conference on Electronics Packaging
  • Place of Presentation: 富山国際会議場
  • Year and Date: 2014-04-24
  • Invited
• [Presentation] Progress and Benchmarking of CMOS-Device Technologies (2014)
  • Author(s): Hitoshi Wakabayashi
  • Organizer: International Conference on Electronics Packaging 2014
  • Place of Presentation: 富山
  • Invited