| Project/Area Number |
25889025
|
|---|
| Research Category |
Grant-in-Aid for Research Activity Start-up
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | Tokyo Institute of Technology |
|---|
Principal Investigator |
YASUI Shintaro 東京工業大学, 応用セラミックス研究所, 助教 (40616687)
|
|---|
| Project Period (FY) |
2013-08-30 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
|
|---|
| Keywords | 相転移 / 強誘電体 / 圧電体 / ドメイン / コンビナトリアル / 薄膜 |
|---|
| Outline of Final Research Achievements |
We focused on what is the most effective thing of piezoelectric materials with superior piezoelectricity. Domain structure around ferroelectric -antiferroelectric phase boundary in (Bi,Sm)FeO3 library films was investigated for deeply understanding of origin of large piezoelectricity. Comparing with the case of common ferroelectric-ferroelectric phase boundary, one domain in ferroelectric-antiferroelectric materials around morphotropic phase boundary showed huge piezoelectricity, however driving force of domain switching, e.g. coercive field, was larger than that in ferroelectric-ferroelectric materials.
|
