Basic study on synthesis of heavily boron-doped diamond wafers
| Project/Area Number |
25889074
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
OHMAGARI Shinya 独立行政法人産業技術総合研究所, ユビキタスエネルギー研究部門, 研究員 (40712211)
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| Project Period (FY) |
2013-08-30 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | ダイヤモンド / ホウ素ドープ / 低抵抗 / ウェハ / 化学気相成長法 / 欠陥 / 欠陥解析 / 高温高圧法 / フィラメントCVD |
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| Outline of Final Research Achievements |
Semiconducting diamond possesses superlative physical properties, which is attracted as next-generation power devices. Toward its industrial use, this start-up research focused on the synthesis of low-resistivity diamond wafers by hot filament chemical vapor deposition.
By controlling the substrate temperature and gas pressure appropriately, unepitaxially grown grains were effectively suppressed. As a result, free-standing undoped plates were successfully fabricated for the first time. The crystalline quality evaluated by X-ray rocking curve was 40 arcsec, which is comparable to commercially available substrates. Hot filament CVD possesses large potential for scaling-up, enabling the innovative wafer production of low-resistivity materials.
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Report
(2 results)
Research Products
(8 results)
