極低温CMOSのキャリア・熱輸送の学理構築とシミュレーション基盤の確立

Research Project

Project/Area Number	25H00731
Research Category	Grant-in-Aid for Scientific Research (A)
Allocation Type	Single-year Grants
Section	一般
Review Section	Medium-sized Section 21:Electrical and electronic engineering and related fields
Research Institution	The University of Tokyo
Principal Investigator	内田建東京大学, 大学院工学系研究科(工学部), 教授 (30446900)
Project Period (FY)	2025-04-01 – 2028-03-31
Project Status	Adopted (Fiscal Year 2025)
Budget Amount *help	¥46,410,000 (Direct Cost: ¥35,700,000、Indirect Cost: ¥10,710,000) Fiscal Year 2025: ¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)