半導体薄膜レーザと多層導波路によるシリコン電子回路上３次元多波長高密度光源実現

Research Project

Project/Area Number	25H00735
Research Category	Grant-in-Aid for Scientific Research (A)
Allocation Type	Single-year Grants
Section	一般
Review Section	Medium-sized Section 21:Electrical and electronic engineering and related fields
Research Institution	Institute of Science Tokyo
Principal Investigator	西山伸彦東京科学大学, 工学院, 教授 (80447531)
Project Period (FY)	2025-04-01 – 2030-03-31
Project Status	Adopted (Fiscal Year 2025)
Budget Amount *help	¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000) Fiscal Year 2025: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)